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. 2016 Feb 25:6:22001.
doi: 10.1038/srep22001.

III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Ji-Hyun Hur  1   2 , Sanghun Jeon  2
Affiliations

III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Ji-Hyun Hur et al. Sci Rep. .

Abstract

As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.

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Figures

Figure 1
Figure 1. Schematic illustration of the III–V semiconductor channel fin-shaped field effect transistor with a charged dislocation located at center of channel and vertical to the top gate surface.
Figure 2
Figure 2. Free electron densities with respect to Fermi energies (0 at conduction band minimum), for several channel widths (Lz), ranging from 5 nm to 20 nm.
For this calculation, the temperature T was room temperature (300 K), Lx was 10 nm, Ly was 20 nm and the material parameters of In0.53Ga0.47As were as follows: dielectric constant = 13.56, lattice parameter c = 5.87 Å and m*0 = 0.041 m0 (at Γ-valley).
Figure 3
Figure 3. Dislocation mobility values as a function of electron densities for different channel widths (Lz), ranging from 5 nm to 15 nm.
The dislocation mobility without quantum confinement effect, obtained in ref. for the dislocation density of 5 × 1011 cm−2 is also plotted for comparison. Parameters are the same as in Fig. 2.
Figure 4
Figure 4. Dislocation mobility values as a function of channel width, for different electron densities.
Parameters are the same as in Fig. 2.
See this image and copyright information in PMC

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