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. 2016 Jun 13;5(1):710.
doi: 10.1186/s40064-016-2468-y. eCollection 2016.

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction

Nguyen Huu Ke  1 , Le Thi Tuyet Trinh  1 , Pham Kim Phung  1 , Phan Thi Kieu Loan  1 , Dao Anh Tuan  1 , Nguyen Huu Truong  2 , Cao Vinh Tran  2 , Le Vu Tuan Hung  1
Affiliations

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction

Nguyen Huu Ke et al. Springerplus. .

Abstract

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

Keywords: Cu2O layer; Electrochemical method; Heterojunction; Solar cells; ZnO nanorods.

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Figures

Fig. 1
Fig. 1
Schematic diagram of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction
Fig. 2
Fig. 2
SEM images of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction. a ZnO nanorods on IGZO substrate. b Top-view of ZnO nanorods. c The cross-section image of the p-Cu2O/i-ZnO nanorods/n-IGZO with growth-time of ZnO nanorods is 2000 s. d The cross-section image of the p-Cu2O/i-ZnO nanorods/n-IGZO with growth-time of ZnO nanorods is 4000 s. e The cross-section image of the p-Cu2O/i-ZnO nanorods/n-IGZO with growth-time of Cu2O is increased to 6 h. f Top-view of Cu2O surface
Fig. 3
Fig. 3
XRD patterns of the ZnO nanorods on IGZO glass and the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction
Fig. 4
Fig. 4
a Absorption spectra and b Tauc plots of the ZnO nanorods on IGZO glass and the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction
Fig. 5
Fig. 5
The dark I–V characteristic curves of: a Cu2O/IGZO and Cu2O/ZnO nanorods/IGZO structures. b Different growth-time of ZnO nanorod; 2000 and 4000 s with the same growth-time of Cu2O; 2 h. c Different growth-time of ZnO nanorod; 2000 and 4000 s with the same growth-time of Cu2O; 4 h. d Different growth-time of ZnO nanorod; 2000 and 4000 s with the same growth-time of Cu2O 6 h
Fig. 6
Fig. 6
The J–V characteristic curves of Cu2O/ZnO-nanorods/IGZO structures in situations of different growth-time of Cu2O; 2 and 6 h with the same growth-time of ZnO nanorods; 2000 s
See this image and copyright information in PMC

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