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. 2016 Nov;28(42):9378-9384.
doi: 10.1002/adma.201602626. Epub 2016 Sep 7.

Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

Bong Gyu Shin  1   2 , Gang Hee Han  1   2 , Seok Joon Yun  1   3 , Hye Min Oh  1   3 , Jung Jun Bae  1   3 , Young Jae Song  1   4   5 , Chong-Yun Park  4 , Young Hee Lee  1   3   4
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Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

Bong Gyu Shin et al. Adv Mater. 2016 Nov.

Abstract

An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2 .

Keywords: MoS2; bandgap; direct-to-indirect bandgap transition; layered materials; strain.

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