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. 2016 Nov;28(44):9783-9791.
doi: 10.1002/adma.201603135. Epub 2016 Sep 14.

Inorganic Double Helices in Semiconducting SnIP

Daniela Pfister  1 , Konrad Schäfer  1 , Claudia Ott  1 , Birgit Gerke  2 , Rainer Pöttgen  2 , Oliver Janka  2 , Maximilian Baumgartner  1 , Anastasia Efimova  3 , Andrea Hohmann  3 , Peer Schmidt  3 , Sabarinathan Venkatachalam  4 , Leo van Wüllen  4 , Ulrich Schürmann  5 , Lorenz Kienle  5 , Viola Duppel  6 , Eric Parzinger  7 , Bastian Miller  7 , Jonathan Becker  7 , Alexander Holleitner  7 , Richard Weihrich  8 , Tom Nilges  1
Affiliations

Inorganic Double Helices in Semiconducting SnIP

Daniela Pfister et al. Adv Mater. 2016 Nov.

Abstract

SnIP is the first atomic-scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right- and left-handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes.

Keywords: double helices; nanorods; photoluminescence; quantum-confinement; semiconductor.

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