200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

Abstract

Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cutoff frequency (f_T) of 427 GHz, the maximum oscillation frequency (f_max) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices. Using a self-aligned gate deposition process, the graphene transistor with 60 nm gate length exhibits a record high f_max of 106 and 200 GHz before and after de-embedding, respectively. This work defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra high frequency circuits.

Keywords: field-effect transistors; maximum oscillation frequency; parasitical resistance; radio frequency; self-aligned.