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. 2016 Sep 19:6:33576.
doi: 10.1038/srep33576.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

Hunho Kim  1 , Young-Jin Kwack  1 , Eui-Jung Yun  2 , Woon-Seop Choi  1
Affiliations

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

Hunho Kim et al. Sci Rep. .

Abstract

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm(2)/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 10(5), and a subthreshold slope of 0.10 V/dec.

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Figures

Figure 1
Figure 1
(a) TGA and (b) DSC thermograms of ZAO solution with a Zr:Al mole ratio of 1:0, 2:1, 1:1, 1:2, and 1:0 measured under N2.
Figure 2
Figure 2. AFM images of ZAO dielectric thin films with a Zr:Al mole ratio of 1:0, 1:1, 1:2, and 1:0 after annealing.
Area of 1 μm × 1 μm.
Figure 3
Figure 3
XPS spectra of (a) deconvoluted O 1 s core shell with ZAO mole ratio and (b) Cl 2p core shell.
Figure 4
Figure 4
(a)Typical C-V characteristics as a function of Zr and Al contents for Al metal/mixed ZAO/p-type Si (Al/ZAO/Si) MOS capacitors and (b) hysteresis characteristics of the normalized C-V curves for the same samples shown in figure (a) and for MOS capacitors with stacked ZAO bilayer dielectrics at 100 kHz.
Figure 5
Figure 5
(a) Typical C0-V and Ctot-V curves at a frequency of 1 MHz for Al/ZAO(Zr:Al = 1:2)/Si MOS structures and Al/ZTO/ZAO(Zr:Al = 1:2)/Si TFT structures, respectively. The equivalent circuits for both structures are shown in the inset of figure (a); (b) C1-V curves of a ZTO active layer extracted by using the results in figure (a) and Eq. (2). The C0-V characteristic is inserted for comparison.
Figure 6
Figure 6
Typical saturation transfer characteristics of ZTO TFTs with a Zr:Al mole ratio of (a) 1:0, (b) 1:1, (c) 1:2, and (d) 0:1 measured at VDS of 5 V and the output characteristics as a function of the VGS for ZTO TFTs with a Zr:Al mole ratio of (e) 1:0, (f) 1:1, (g) 1:2, and (h) 0:1.
Figure 7
Figure 7. Saturation mobilities (μeff) at room temperature as a function of VGS -VON estimated from the transfer curves for ZTO TFTs with a Zr:Al mole ratio of 1:0 and 1:2 shown inFig. 6(a,c) by using Eq. (3).
See this image and copyright information in PMC

References

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