Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O3/Nb:SrTiO3 Heterostructures

Abstract

In this work, epitaxial Pb(Zr_0.4Ti_0.6)O₃ (PZT) thin films with different thicknesses were deposited on Nb-doped SrTiO₃ (NSTO) single-crystal substrates by chemical solution deposition (CSD), and their ferroelectric resistive switching behaviors were investigated. The results showed that the maximum ON/OFF ratio up to 850 could be obtained in the PZT/NSTO heterostructure with the 150 nm thick PZT film. On the basis of the Schottky-Simmons model and the modified semiconductor theory, we also evaluated the interfacial built-in field and the depletion layer at the PZT/NSTO interface, which can be modulated strongly by the ferroelectric polarization, but are independent of the thickness of the PZT thin films. It is clear that the ferroelectric resistive switching is related to the ferroelectric polarization and modulated by the thickness of ferroelectric films. Therefore, there is an optimal thickness of the PZT film for the maximum ON/OFF ratio due to the ferroelectricity and conductivity mutually restricting. It can be expected that by adjusting the ferroelectricity and conductivity of the ferroelectric thin film and its thickness, the maximum switching ratio can be further improved.

Keywords: ON/OFF ratio; ferroelectric heterostructures; ferroelectric polarization; interfacial built-in field; resistive switching behaviors.