Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching
- PMID: 28097688
- DOI: 10.1002/adma.201601575
Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching
Abstract
By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin-orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin-orbit-torque magnetic random access memory to higher storage density for practical applications.
Keywords: Co/Pt multilayers; initialization-free; multilevel; spin-orbit torque.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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