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. 2017 Jul;29(26).
doi: 10.1002/adma.201700425. Epub 2017 Apr 27.

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film

Yuxi Yang  1 , Guoliang Yuan  1 , Zhibo Yan  2 , Yaojin Wang  1 , Xubing Lu  3 , Jun-Ming Liu  2
Affiliations

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film

Yuxi Yang et al. Adv Mater. 2017 Jul.

Abstract

Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi0.95 Co0.05 O3 (BTCO) film with a SrRuO3 (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.

Keywords: flexible; inorganic; resistive random access memory; semitransparent.

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