Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
. 2017 Jun 13;7(1):3444.
doi: 10.1038/s41598-017-03757-y.

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

Affiliations

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

C Borderon et al. Sci Rep. .

Abstract

Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. The c-domain sample was found to have a higher coercive field E c and higher dielectric losses than the other which presents approximately 60% of c-domains and 40% of a-domains as observed by piezo force microscopy (PFM) characterization. Hyperbolic law measurements reveal that the higher coercive field is due to domain wall pinning in deeper defects and hence a higher field E th is required for unpinning. The dissipation factors due to domain wall motion, however, are similar in both samples since the domain wall density is low and there is almost no interaction between domain walls. The higher dielectric losses in the c-domain oriented sample are a result of a greater contribution from the lattice and seem to be due to strain from the substrate, which is not relieved in a thin sample. PFM and dielectric characterization are complementary methods which provide a better understanding of the domain wall motion.

PubMed Disclaimer

Conflict of interest statement

The authors declare that they have no competing interests.

Figures

Figure 1
Figure 1
Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm × 1 μm for the c-domain sample and 1 μm × 0.5 μm for the a/c-domain sample.
Figure 2
Figure 2
Ferroelectric polarizations and switching current hysteresis loops of (a) c-domain and (b) a/c-domain samples.
Figure 3
Figure 3
Dielectric properties (a) εr and (b) tanδ as a function of frequency (E 0 = 5 kV/cm) for the two samples.
Figure 4
Figure 4
(a) Real and (b) imaginary part of the permittivity as a function of AC field amplitude (f = 10 kHz) for the two samples.

References

    1. Garcia JE, et al. Evaluation of domain wall motion in lead zirconate titanate ceramics by nonlinear response measurements. J. Appl. Phys. 2008;103(5):054108. doi: 10.1063/1.2894595. - DOI
    1. Bolten D, Bottger U, Waser R. Reversible and irreversible piezoelectric and ferroelectric response in ferroelectric ceramics and thin films. Journal of the European Ceramic Society. 2004;24(5):725–732. doi: 10.1016/S0955-2219(03)00317-0. - DOI
    1. Eitel RE, Shrout TR, Randall CA. Nonlinear contributions to the dielectric permittivity and converse piezoelectric coefficient in piezoelectric ceramics. J. Appl. Phys. 2006;99(12):124110. doi: 10.1063/1.2207738. - DOI
    1. Trolier-McKinstry S, Gharb NB, Damjanovic D. Piezoelectric nonlinearity due to motion of 180° domain walls in ferroelectric materials at subcoercive fields: a dynamic poling model. Appl. Phys. Lett. 2006;88(20):202901. doi: 10.1063/1.2203750. - DOI
    1. Taylor DV, Damjanovic D. Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields. J. Appl. Phys. 1997;82(4):1973–1975. doi: 10.1063/1.366006. - DOI

Publication types

LinkOut - more resources