Trions in bulk and monolayer materials: Faddeev equations and hyperspherical harmonics

Abstract

The negatively T ^- and positively T ⁺ charged trions in bulk and monolayer semiconductors are studied in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing the Faddeev equation with the Coulomb potential in 3D configuration space. Results of calculations of the binding energies for T ^- are consistent with previous computational studies, while the T ⁺ is unbound for all considered cases. The binding energies of trions in monolayer semiconductors are calculated using the method of hyperspherical harmonics by employing the Keldysh potential. It is shown that 2D T ^- and T ⁺ trions are bound and the binding energy of the positive trion is always greater than for the negative trion due to the heavier effective mass of holes. Our calculations demonstrate that screening effects play an important role in the formation of bound states of trions in 2D semiconductors.