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. 2018 Oct 16;115(42):10570-10575.
doi: 10.1073/pnas.1808747115. Epub 2018 Oct 3.

Nonsaturating large magnetoresistance in semimetals

Affiliations

Nonsaturating large magnetoresistance in semimetals

Ian A Leahy et al. Proc Natl Acad Sci U S A. .

Abstract

The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb2, and TaSb2, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb2 and TaSb2 are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.

Keywords: Weyl semimetals; magnetic susceptibility; nonsaturating magnetoresistance; topological semimetals.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Fig. 1.
Fig. 1.
Schematically depicted nonsaturating MR phenomena and representative energy dispersions for phosphides (TaP) (Left) and antimonates (TaSb2) (Right). The phosphides’ MR is characterized by quasi-linear to linear transition as H increases, while the antimonates’ MR is characterized by persistent quadratic H dependence, arising from semiclassical charge compensation. Each bar indicates Δρ/ρ0=5×105%. Magnetic field was applied up to μ0H=31 T at T=0.3 K.
Fig. 2.
Fig. 2.
(A and B) The Hall angle tanθH (A) for NbP (red) and NbSb2 (green) as a function of H and (B) for TaP (magenta) and TaSb2 (black), measured at T=0.3 K. Strong quantum oscillations in phosphides result in spike-like features. (C) tan2θH measured at μ0H=7 T as a function of T. (Inset) tan2θH vs. T plotted in log – scale in the y axis scale, where NbSb2 and TaSb2 data are clearly resolved.
Fig. 3.
Fig. 3.
ρxx(T) at different Hs is shown for (A) NbP, (B) TaP, (C) NbSb2, and (D) TaSb2. ρxx(T) at μ0H=7 T, defined in Eq. 1, is plotted in A–D, Insets.
Fig. 4.
Fig. 4.
(A–D) Kohler’s plots of phosphides in (A) NbP and (B) TaP and of antimonates in (C) NbSb2 and (D) TaSb2. Arrows in A and B indicate the locations of HS, where tanθH saturates and the MR switches to H linear.
Fig. 5.
Fig. 5.
ρxy(H) as a function of H in (A) NbP and (B) NbSb2, measured at T=0.3 K. Note the difference of the magnitude of ρxy. Dashed line in A shows a fit to Eq. 3 and dashed line in B shows a fit to a two-band model (SI Appendix, section 1). ρxy(H)’s up to 31 T are shown in A and B, Insets, where the small boxes correspond to the main panels.
Fig. 6.
Fig. 6.
(A and B) χ vs. T in the phosphides (red) and antimonates (blue), measured at μ0H=1 T. Solid line is fit to Eq. 2, which gives μ=40 meV for one linear node for NbP (A) and μ1=51 meV and μ2=11 meV for two linear nodes for TaP (B). Arrows indicate the locations of Tmin (main text).

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