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. 2018 Feb 4;9(2):69.
doi: 10.3390/mi9020069.

High-Performance MIM Capacitors for a Secondary Power Supply Application

Jiliang Mu  1   2 , Xiujian Chou  3   4 , Zongmin Ma  5   6 , Jian He  7   8 , Jijun Xiong  9
Affiliations

High-Performance MIM Capacitors for a Secondary Power Supply Application

Jiliang Mu et al. Micromachines (Basel). .

Abstract

Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 10³ mm² can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al₂O₃ layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm²) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10-7 A/cm² at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V²). In addition, the device's performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole⁻Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

Keywords: electrical properties; metal-insulator-metal capacitors; microelectromechanical systems (MEMS); microstructures; secondary power supply.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Process sequence to fabricate metal-insulator-metal (MIM) capacitors. (a) Si trenches etching, (b) MIM deposition, (c) Void filling, (d) Bottom electrode exposure, (e) Al2O3 evaporation, (f) Top and Bottom electrodes exposure, (g) Al evaporation, (h) Al pad etching.
Figure 2
Figure 2
Cross-sectional SEM images of MIM capacitor A. (a) the overview images, (b) trench top, (c) trench bottom, (d) trench sidewall.
Figure 3
Figure 3
Capacitance density per unit planar area and dissipation factor with frequency of capacitors A and B.
Figure 4
Figure 4
Dependencies of permittivity on frequency for capacitors A and B.
Figure 5
Figure 5
The leakage current density’s dependence on the voltage for capacitors A and B.
Figure 6
Figure 6
Measured leakage current density at different temperatures for capacitor A.
Figure 7
Figure 7
ln(J/E) versus E1/2 for capacitor A; Inset: ln(J) versus E1/2 for capacitor A.
Figure 8
Figure 8
Voltage dependence on capacitance for capacitor A.
Figure 9
Figure 9
Normalized capacitance as a function of voltage of capacitor A at different frequencies.
See this image and copyright information in PMC

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