Tuning diamagnetic susceptibility of impurity doped quantum dots by noise-binding energy interplay

Abstract

In the present work we explore the role of noise-binding energy (BE) interplay on the diamagnetic susceptibility (DMS) of doped $GaAs$ quantum dot (QD). Gaussian white noise has been invoked for the above exploration. And Gaussian impurity acts as a dopant in the present study. The mode of inclusion of noise to the system significantly affects the above interplay and thus prominently modulates the DMS profile. The outcomes of the inspection unfolds the way by which DMS of doped QD can be regulated by prudent adjustment of noise-BE interaction.

Keywords: Materials science.

Figure 1

Plots of (a) |χ_dia| and (b) $\langle {(r-r_0)}^2\rangle$ against B for six different values of BE without noise: (i) 0 meV, (ii) 50 meV, (iii) 125 meV, (iv) 150 meV, (v) 200 meV and (vi) 250 meV.

Figure 2

Plots of (a) |χ_dia| and (b) $\langle {(r-r_0)}^2\rangle$ against B for six different values of BE when additive noise is present: (i) 0 meV, (ii) 50 meV, (iii) 125 meV, (iv) 150 meV, (v) 200 meV and (vi) 250 meV.

Figure 3

Plots of (a) |χ_dia| and (b) $\langle {(r-r_0)}^2\rangle$ against B for six different values of BE when multiplicative noise is present: (i) 0 meV, (ii) 50 meV, (iii) 125 meV, (iv) 150 meV, (v) 200 meV and (vi) 250 meV.

Figure 4

Plots of (a) |χ_dia| and (b) $\langle {(r-r_0)}^2\rangle$ against BE at B = 25 T: (i) in absence of noise, (ii) while additive noise is operating and (iii) while multiplicative noise is operating.