Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications
- PMID: 30990970
- DOI: 10.1002/smll.201900332
Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications
Abstract
Development of high-performance organic electronic and optoelectronic devices relies on high-quality semiconducting crystals that have outstanding charge transport properties and long exciton diffusion length and lifetime. To achieve integrated device applications, it is a prerequisite to precisely locate the organic semiconductor crystals (OSCCs) to form a specifically patterned structure. Well-patterned OSCCs can not only reduce leakage current and cross-talk between neighboring devices, but also facilely integrate with other device elements and their corresponding interconnects. In this Review, general strategies for the patterning of OSCCs are summarized, and the advantages and limitations of different patterning methods are discussed. Discussion is focused on an advanced strategy for the high-resolution and wafer-scale patterning of OSCC by a surface microstructure-assisted patterning method. Furthermore, the recent progress on OSCC pattern-based integrated circuities is highlighted. Finally, the research challenges and directions of this young field are also presented.
Keywords: integrated devices; organic field-effect transistors; organic semiconductor crystals; patterned assembly; photodetectors.
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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