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. 2019 Jul 5;9(1):9751.
doi: 10.1038/s41598-019-46328-z.

An Electrical Model of Hydrocephalus Shunt Incorporating the CSF Dynamics

R Baghbani  1
Affiliations

An Electrical Model of Hydrocephalus Shunt Incorporating the CSF Dynamics

R Baghbani. Sci Rep. .

Abstract

The accumulation of cerebrospinal fluid (CSF) in brain ventricles and subarachnoid space is known as hydrocephalus. Hydrocephalus is a result of disturbances in the secretion or absorption process of CSF. A hydrocephalus shunt is an effective method for the treatment of hydrocephalus. In this paper, at first, the procedures of secretion, circulation, and absorption of CSF are studied and subsequently, the mathematical relations governing the pressures in different interacting compartments of the brain are considered. A mechanical-electrical model is suggested based on the brain physiology and blood circulation. In the proposed model, hydrocephalus is modeled with an incremental resistance (Ro) and hydrocephalus shunt, which is a low resistance path to drain the accumulated CSF in the brain ventricles, is modeled with a resistance in series with a diode. At the end, the simulation results are shown. The simulation results can be used to predict the shunt efficiency in reducing CSF pressure and before a real shunt implementation surgery is carried out in a patient's body.

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Conflict of interest statement

The author declares no competing interests.

Figures

Figure 1
Figure 1
Diagram of the compartmental model that conceptually represents the relationship between volumes and pressures in the human brain.
Figure 2
Figure 2
A model of production, circulation, and absorption of CSF fluid along with hydrocephalus shunt.
Figure 3
Figure 3
Electrical equivalent circuit of production and circulation of CSF in the brain,.
Figure 4
Figure 4
Electrical equivalent circuit of a hydrocephalus shunt.
Figure 5
Figure 5
Electrical equivalent circuit of production and circulation of CSF fluid in the brain with hydrocephalus shunt.
Figure 6
Figure 6
Pressure waveforms in normal conditions (without hydrocephalus): ICP intracranial pressure, Pa arterial pressure, Pc capillary pressure, and Pv venous pressure.
Figure 7
Figure 7
Pressure waveforms in moderate hydrocephalus (Ro = 5 Ω (40 mmHg/ml/min)): ICP intracranial pressure, Pa arterial pressure, Pc capillary pressure, and Pv venous pressure.
Figure 8
Figure 8
Pressure waveforms in severe hydrocephalus (Ro = 10 Ω (80 mmHg/ml/min)): ICP intracranial pressure, Pa arterial pressure, Pc capillary pressure, and Pv venous pressure.
Figure 9
Figure 9
Pressure waveforms in case of using a perfect hydrocephalus shunt: ICP intracranial pressure, Pa arterial pressure, Pc capillary pressure, and Pv venous pressure.
Figure 10
Figure 10
ICP values for four scenarios; from left to right: healthy brain, moderate hydrocephalus brain, severe hydrocephalus brain, and severe hydrocephalus brain with a perfect shunt; increase percent of ICP has been shown in two hydrocephalus scenarios.
Figure 11
Figure 11
ICP waveform in a manner that hydrocephalous shunt has been considered as a nonlinear and time variant resistance to illustrate over-draining and opening/closing situations of the shunt.
Figure 12
Figure 12
Waveforms of arterial (Pa), capillary (Pc), venous (Pv) pressures and (CBF) cerebral blood flow in a manner that hydrocephalous shunt has been considered as a nonlinear and time variant resistance to illustrate over-draining and opening/closing situations of the shunt.
Figure 13
Figure 13
Cerebral blood flow (CBF) in which hydrocephalous shunt is completely blocked (Rshunt = 100 Ω).
See this image and copyright information in PMC

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