Conduction through a narrow inward-rectifier K+ channel pore
- PMID: 31511304
- PMCID: PMC6785732
- DOI: 10.1085/jgp.201912359
Conduction through a narrow inward-rectifier K+ channel pore
Abstract
Inwardly rectifying potassium (Kir) channels play a key role in controlling membrane potentials in excitable and unexcitable cells, thereby regulating a plethora of physiological processes. G-protein-gated Kir channels control heart rate and neuronal excitability via small hyperpolarizing outward K+ currents near the resting membrane potential. Despite recent breakthroughs in x-ray crystallography and cryo-EM, the gating and conduction mechanisms of these channels are poorly understood. MD simulations have provided unprecedented details concerning the gating and conduction mechanisms of voltage-gated K+ and Na+ channels. Here, we use multi-microsecond-timescale MD simulations based on the crystal structures of GIRK2 (Kir3.2) bound to phosphatidylinositol-4,5-bisphosphate to provide detailed insights into the channel's gating dynamics, including insights into the behavior of the G-loop gate. The simulations also elucidate the elementary steps that underlie the movement of K+ ions through an inward-rectifier K+ channel under an applied electric field. Our simulations suggest that K+ permeation might occur via direct knock-on, similar to the mechanism recently shown for Kv channels.
© 2019 Bernsteiner et al.
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Comment in
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Modeling GIRK channel conductance.J Gen Physiol. 2019 Oct 7;151(10):1159. doi: 10.1085/jgp.201912479. Epub 2019 Sep 12. J Gen Physiol. 2019. PMID: 31515439 Free PMC article.
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