InGaN as a Substrate for AC Photoelectrochemical Imaging
- PMID: 31614420
- PMCID: PMC6832470
- DOI: 10.3390/s19204386
InGaN as a Substrate for AC Photoelectrochemical Imaging
Abstract
AC photoelectrochemical imaging at electrolyte-semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.
Keywords: InGaN/GaN epilayer; cell imaging; light-activated electrochemistry; light-addressable potentiometric sensor; photoelectrochemistry.
Conflict of interest statement
The authors declare no conflict of interest.
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