Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
. 2019 Dec 6;4(25):21417-21420.
doi: 10.1021/acsomega.9b03118. eCollection 2019 Dec 17.

Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates

Wei Dou  1 , Yuanyuan Tan  2
Affiliations

Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates

Wei Dou et al. ACS Omega. .

Abstract

Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or -1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed.

PubMed Disclaimer

Conflict of interest statement

The authors declare no competing financial interest.

Figures

Figure 1
Figure 1
(a) Schematic picture of junctionless dual-gate paper TFTs. (b) Equivalent circuit of such junctionless DGTFTs. (c) Specific gate capacitance of junctionless dual-gate paper TFTs. (d) Leakage current of such TFTs.
Figure 2
Figure 2
(a) IDS–VGS curves of junctionless DGTFTs on paper substrates with various channel thicknesses (TITO = 5, 20, 40, and 60 nm) at VDS = 1.5 V. (b) IDS–VDS curve for a fresh device with TITO = 20 nm.
Figure 3
Figure 3
(a) Transfer characteristics of such junctionless DGTFTs on paper substrates with VG3 ranging from 2 to −2 V. (b) (IDS)1/2 vs VG3 curves.
Figure 4
Figure 4
(a) Vth and Ion/off ratio of such DGTFTs on paper substrates at different VG3. (b) μ and S of such DGTFTs on paper substrates at different VG3.
Figure 5
Figure 5
(a) Low-frequency pulse respond characteristic of the device with VG2 = −0.5 to 1.5 V, VG3 = 0 V, and VDS = 1.5 V. (b) AND logic function with a large Ion/off.
See this image and copyright information in PMC

References

    1. Luo F. C.; Chen I.; Genovese F. C. A thin-film transistor for flat planel displays. IEEE Trans. Electron Devices 1981, 28, 740–743. 10.1109/t-ed.1981.20422. - DOI
    1. Spijkman M.-J.; Myny K.; Smits E. C. P.; Heremans P.; Blom P. W. M.; de Leeuw D. M. Dual-gate thin-film transistors, integrated circuits and sensors. Adv. Mater. 2011, 23, 3231–3242. 10.1002/adma.201101493. - DOI - PubMed
    1. Guo Y.; Yu G.; Liu Y. Functional organic field-effect transistors. Adv. Mater. 2010, 22, 4427–4447. 10.1002/adma.201000740. - DOI - PubMed
    1. Xia F.; Farmer D. B.; Lin Y.-m.; Avouris P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett. 2010, 10, 715–718. 10.1021/nl9039636. - DOI - PubMed
    1. Zan H.-W.; Chen W.-T.; Yeh C.-C.; Hsueh H.-W.; Tsai C.-C.; Meng H.-F. Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement. Appl. Phys. Lett. 2011, 98, 153506.10.1063/1.3578403. - DOI

LinkOut - more resources