Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
Review
. 2019 Dec 24;20(1):121.
doi: 10.3390/s20010121.

Magnetic Tunnel Junction Applications

Nilson Maciel  1 , Elaine Marques  1 , Lírida Naviner  1 , Yongliang Zhou  2 , Hao Cai  2
Affiliations
Review

Magnetic Tunnel Junction Applications

Nilson Maciel et al. Sensors (Basel). .

Abstract

Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.

Keywords: magnetic random access memory; magnetic tunnel junction; spin transfer torque; spin–orbit torque; voltage-controlled magnetic anisotropy.

PubMed Disclaimer

Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Magnetic tunnel junction (MTJ).
Figure 2
Figure 2
Structure and stable states of the voltage-controlled magnetic anisotropy (VCMA)-MTJ device.
Figure 3
Figure 3
Memories devices: (a) STT-MRAM (b) VCMA-MeRAM (c) SOT-MRAM.
Figure 4
Figure 4
4-bit NAND-SPIN structure.
Figure 5
Figure 5
Timing diagram of write and read operations for the NAND-SPIN over MTJ2.
Figure 6
Figure 6
NV-AND/NV-NAND structure.
Figure 7
Figure 7
NV-OR/NV-NOR structure.
Figure 8
Figure 8
NV-XOR/NV-NXOR structure.
Figure 9
Figure 9
Spin-MTJ based Non-Volatile Flip-Flop proposed in Reference [59].
Figure 10
Figure 10
Single-bit full adder (FA) schematic.
Figure 11
Figure 11
Full adder structure: (a) SUM sub-circuit (b) CARRY sub-circuit.
Figure 12
Figure 12
Comparator proposed in Reference [67].
Figure 13
Figure 13
ADC proposed in Reference [67].
Figure 14
Figure 14
Timing diagram of the ADC operations [67].
Figure 15
Figure 15
ADC proposed in Reference [10].
Figure 16
Figure 16
The MTJ-based voltage-controlled stochastic oscillator (VCSO) proposed in Reference [71].
Figure 17
Figure 17
Adaptive Quantization Rate (AQR) generator proposed in Reference [72].
Figure 18
Figure 18
Q-level adaptive intermittent quantizer (AIQ) architecture proposed in Reference [9].
Figure 19
Figure 19
The MTJ-based temperature sensor proposed in Reference [73].
Figure 20
Figure 20
Full bridge configuration.
See this image and copyright information in PMC

References

    1. Baibich M.N., Broto J.M., Fert A., Van Dau F.N., Petroff F., Etienne P., Creuzet G., Friederich A., Chazelas J. Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices. Phys. Rev. Lett. 1988;61:2472–2475. doi: 10.1103/PhysRevLett.61.2472. - DOI - PubMed
    1. Ennen I., Kappe D., Rempel T., Glenske C., Hütten A. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications. Sensors. 2016;16:904. doi: 10.3390/s16060904. - DOI - PMC - PubMed
    1. Gregg J.F., Petej I., Jouguelet E., Dennis C. Spin electronics a review. J. Phys. Appl. Phys. 2002;35:R121–R155. doi: 10.1088/0022-3727/35/18/201. - DOI
    1. Peng S., Zhang Y., Wang M., Zhang Y., Zhao W. Magnetic Tunnel Junctions for Spintronics: Principles and Applications. Wiley; Hoboken, NJ, USA: 2014. pp. 1–16. - DOI
    1. Chappert C., Fert A., Dau F.N.V. The emergence of spin electronics in data storage. Nat. Mater. 2007;6:813–823. doi: 10.1038/nmat2024. - DOI - PubMed

LinkOut - more resources