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. 2020 Jan 28;11(2):143.
doi: 10.3390/mi11020143.

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Imrich Gablech  1   2 , Jaroslav Klempa  1   2 , Jan Pekárek  1   2 , Petr Vyroubal  3 , Jan Hrabina  4 , Miroslava Holá  4 , Jan Kunz  5 , Jan Brodský  1 , Pavel Neužil  6
Affiliations

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Imrich Gablech et al. Micromachines (Basel). .

Abstract

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

Keywords: AlN; complementary metal oxide semiconductor (CMOS) compatible; energy harvesting; high performance; micro-electro-mechanical systems (MEMS) cantilever.

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Conflict of interest statement

The authors declare no conflict of interests.

Figures

Figure 1
Figure 1
Layer composition and their dimensions of piezoelectric energy harvesters (PEH) (not to scale): (a) side view; (b) top view.
Figure 2
Figure 2
Fabrication process flow (not to scale): (a) Deposited layers on top side of Si substrate; (b) patterning of Ti/AlN/Ti/Al structure; (c) top-side trench etching using deep reactive ion etching (DRIE) method; (d) metallization followed by back-side etching causing separation of chips; (e) back-side etching, using DRIE method to form final structure.
Figure 3
Figure 3
Fabricated PEH mounted in LCC68: (a) top view; (b) bottom view showing hole and PEH mass.
Figure 4
Figure 4
X-ray diffractogram determined using Brag-Brentano setup showing 2θ peak positions of Ti (001) ≈38.35° and AlN (001) ≈36.06°.
Figure 5
Figure 5
Scheme of coupled solution for electrostatic and structural solver, employing piezoelectric matrix.
Figure 6
Figure 6
Scheme of PEH model with electrically connected RL.
Figure 7
Figure 7
Interferometric measurement: (a) setup; (b) oscilloscope electrical signal.
Figure 8
Figure 8
(a) Measured DZ at fr = 2520 Hz with various VAC. (b) The results of FEM simulations for the same VAC bias.
Figure 9
Figure 9
Measurement setup, based on vibration excitation of PEH for determination of PM.
Figure 10
Figure 10
(a) Power spectra of measured PEH near fr = 2480 Hz with constant A ≈ 0.5 g, (b) dependence of maximum generated PS and PM and calculated value of NPD on A.
See this image and copyright information in PMC

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