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. 2020 Feb 28;124(8):087701.
doi: 10.1103/PhysRevLett.124.087701.

Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

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Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

K H A Villegas et al. Phys Rev Lett. .

Abstract

We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.

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