Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
Review
. 2020 Jul;15(7):545-557.
doi: 10.1038/s41565-020-0724-3. Epub 2020 Jul 9.

Two-dimensional materials for next-generation computing technologies

Affiliations
Review

Two-dimensional materials for next-generation computing technologies

Chunsen Liu et al. Nat Nanotechnol. 2020 Jul.

Abstract

Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal-oxide-semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies.

PubMed Disclaimer

References

    1. Horowitz, M. Computing's energy problem (and what we can do about it). In Proc. 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 10–14 (IEEE, 2014).
    1. Lee, D. U. et al. A 1.2 V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV. In Proc. 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 432–433 (IEEE, 2014).
    1. Liu, D. & Park, S. Three-dimensional and 2.5 dimensional interconnection technology: state of the art. J. Electron. Packag 136, 014001 (2014).
    1. Shulaker, M. M. et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature 547, 74–78 (2017).
    1. Dennard, R. H., Gaensslen, F. H., Rideout, V. L., Bassous, E. & LeBlanc, A. R. Design of ion-implanted MOSFET's with very small physical dimensions. IEEE J. Solid-State Circuits 9, 256–268 (1974).

Publication types

LinkOut - more resources