MOSFET dose measurements for proton SOBP beam

Abstract

Purpose: The aim of this work was to develop a computational scheme for the correction of the LET dependence on the MOSFET response in water phantom dose measurements for a spread-out Bragg peak (SOBP) proton beam.

Methods: The LET dependence of MOSFET was attributed to the stopping power ratio of SiO₂ to H₂O and to the fractional hole yield in the SiO₂ layer. Using literature values for the stopping powers of the continuous slowing down approximation and measured fractional hole yields vs. electric field and LET, formulas were derived for the computation of a dose-weighted correction factor of a SOBP beam.

Results: Dose-weighted correction factors were computed for a clinical 190-MeV proton SOBP beam in a high-density polyethylene phantom. By applying correction factors to the SOBP beam, which consisted of weighted monoenergetic Bragg peaks, the MOSFET outputs were predicted and agreed well with the measured MOSFET responses.

Conclusion: By applying LET dependent correction factors to MOSFET data, quality assurance of dose verification based on MOSFET measurements becomes possible for proton therapy.

Keywords: Dose-weighted correction factor; LET dependence; MOSFET dosimeter; Recombination effect; Residual range.