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. 2021 Mar 23;15(3):5689-5695.
doi: 10.1021/acsnano.1c00968. Epub 2021 Mar 2.

Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

Mengwei Si  1 , Zhuocheng Zhang  1 , Sou-Chi Chang  2 , Nazila Haratipour  2 , Dongqi Zheng  1 , Junkang Li  1 , Uygar E Avci  2 , Peide D Ye  1
Affiliations

Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

Mengwei Si et al. ACS Nano. .

Abstract

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In2Se3/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In2Se3 c-FSJ is achieved with a high on/off ratio > 104 at room temperature, on/off ratio > 103 at an elevated temperature of 140 °C, retention > 104 s, and endurance > 106 cycles. The on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >108 by introducing a metal/α-In2Se3/insulator/metal structure.

Keywords: 2D material; asymmetry; ferroelectric semiconductor; nonvolatile memory; α-In2Se3.

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