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. 2021 May 1;12(5):509.
doi: 10.3390/mi12050509.

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Yu-Chun Huang  1 , Hsien-Chin Chiu  1 , Hsuan-Ling Kao  1 , Hsiang-Chun Wang  1 , Chia-Hao Liu  1 , Chong-Rong Huang  1 , Si-Wen Chen  1
Affiliations

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Yu-Chun Huang et al. Micromachines (Basel). .

Abstract

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

Keywords: low-resistance SiC substrate; normally off; p-GaN gate HEMT; temperature.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
(a) Structure of p-GaN gate HEMT on low-resistance substrate. (b) Outward appearance of low-resistance SiC wafer.
Figure 2
Figure 2
I–V characteristics of LRSiC-HEMT and Si-HEMT with LGS/LG/LGD/WG = 2/5/5/100 μm. (a) Transfer IDS-VGS characteristic. (b) Output IDS-VDS characteristic.
Figure 3
Figure 3
(a) Off-state breakdown voltage and (b) vertical breakdown voltage measurement.
Figure 4
Figure 4
Temperature following the time, with the device operating for 60 s and cooling down for 50 s.
Figure 5
Figure 5
(a) Transfer characteristics of LRSiC-HEMT from 25 to 175 °C; (b) T-dependence of VTH and RON.
Figure 6
Figure 6
Pulsed IDS−VDS characteristics from quiescent gate bias (VGSQ) point of 0 V with 2 µs pulse width and 200 µs pulse period. The quiescent drain bias (VDSQ) was then swept from 0 to 80 V (in 20-V increments).
Figure 7
Figure 7
Dynamic Ron ratio of LRSiC-HEMT and Si-HEMT.
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