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. 2021 May 20;11(5):373.
doi: 10.3390/membranes11050373.

Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1-XO Films Obtained through Radio-Frequency Magnetron Sputtering

Wen-Yen Lin  1 , Feng-Tsun Chien  2 , Hsien-Chin Chiu  3 , Jinn-Kong Sheu  4 , Kuang-Po Hsueh  5
Affiliations

Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1-XO Films Obtained through Radio-Frequency Magnetron Sputtering

Wen-Yen Lin et al. Membranes (Basel). .

Abstract

Zirconium-doped MgxZn1-xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm-3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1-xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

Keywords: MgO; MgZnO; ZnO; ZrO2; radio-frequency magnetron sputtering; thin film transistor.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
(Color Online) X-ray diffraction scan profiles of Zr-doped MgxZn1−xO (MZO) films annealed at various temperatures.
Figure 2
Figure 2
(Color Online) (a) Full transmission spectra and (b) transmission spectra in the 275–375 nm range of the as-grown and annealed Zr-doped MZO films deposited on sapphire substrates. (c) Relationship between (αhν)2 and photon energy hν. (d) Summary of the Eg of the as-deposited and annealed Zr-doped MZO films.
Figure 3
Figure 3
(Color Online) (a) X-ray photoelectron spectroscopy (XPS) spectrum of surface elements in the as-deposited Zr-doped MZO film. (b) C 1s, (c) O 1s, (d) Zn 2p3/2, (e) Mg 2p, and (f) Zr 3d XPS spectra of as-grown Zr-doped MZO films annealed at 800, 900, and 1000 °C, with spectra obtained at the surface and at a depth of 40 nm.
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