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. 2021 Aug 17;118(33):e2108617118.
doi: 10.1073/pnas.2108617118.

Moving Dirac nodes by chemical substitution

Affiliations

Moving Dirac nodes by chemical substitution

Niloufar Nilforoushan et al. Proc Natl Acad Sci U S A. .

Abstract

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved Photo-Emission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, [Formula: see text], through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of [Formula: see text] across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the [Formula: see text] symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making [Formula: see text] a model system to functionalize Dirac materials by varying the strength of electron correlations.

Keywords: Dirac semi-metals; correlated electronic systems; functional topological materials.

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Conflict of interest statement

The authors declare no competing interest.

Figures

Fig. 1.
Fig. 1.
Experimental observation of Dirac states in the phase diagram of BaCo1xNixS2. (A) Phase diagram of BaCo1xNixS2. The transition lines between the PM, the paramagnetic insulator (PI), and the antiferromagnetic insulator (AFI) are reported. Colored circles indicate the different doping levels x studied in this work. This doping alters the dp charge-transfer gap (ΔCT). (B) Crystal structure of BaNiS2. Blue, red, and yellow spheres represent the Ni, S, and Ba atoms, respectively. The tetragonal unit cell is indicated by black solid lines. Lattice parameters are a = 4.44 Å and c = 8.93 Å (45). (B, Upper) Projection of the unit cell in the xy plane, containing two Ni atoms. (C) Schematics of the energy levels. The hybridization of d and p orbitals creates the Dirac states, and the dp charge-transfer gap fixes the position of these states in the Ek space. (D) A three-dimensional ARPES map of BaNiS2 (x=1) taken at 70-eV photon energy. The top surface shows the Fermi surface, and the sides of the cube present the band dispersion along high-symmetry directions. The linearly dispersing bands along ΓM cross each other at the Fermi level, EF, thus creating four Dirac nodes. (E) We observe the oval-shaped section of the linearly dispersing bands on the kxky plane for EEF=100 meV. The linearly dispersing bands along the major and minor axis of the oval are also shown.
Fig. 2.
Fig. 2.
Mechanism of band inversion and formation of hybridized Dirac states. (A) Schematics of the d- and p-orbitals of Ni and S, respectively. (A, Right) The strong hybridization of the d-orbitals with the ligand p-orbitals, favored by the NSS, is responsible for the band inversion. (B) Band symmetries along the MΓ direction. At the right-hand (left-hand) side, we report the symmetries at Γ (M), while the symmetries in between follow the irreps of the C2v point group, represented by the color code in the key. The outer +/ signs indicate the parity of the respective Bloch wave functions at the beginning and at the end of the k-path. (C) Evolution of the energy splitting between even and odd combinations of d-orbitals along MΓ. The dominant orbital character is reported. The navy blue (blue) vertical arrows indicate the splitting Δ3 (Δ1) between the dx2y2 (dz2) bands at Γ due to the hybridization with the ligand pz-orbitals. The gray arrow indicates the splitting Δ2 of dxz/dyz bands at Γ due to their hybridization with the px/py orbitals.
Fig. 3.
Fig. 3.
Experimental ARPES evolution of Dirac states with doping x, in BaCo1xNixS2. (A and B) Dispersion of these states for x=1. A shows the iso-energy contours with increasing binding energy. B shows the dispersion along the high-symmetry directions ΓM and XY. Note the anisotropy of the dispersion, which is due to the oval shape of the pockets at the Fermi surface. Dashed lines are a guide to the eye that represent schematically the dispersion. Panels C and D and panels E and F are the same as in A and B for the x=0.75 and the x=0.3 samples, respectively. All spectra are obtained with a photon energy of 70 eV.
Fig. 4.
Fig. 4.
Evolution of Dirac states with doping x, in BaCo1xNixS2. (A) Curves fitting the experimental Dirac states for different values of x. (B) Evolution of the Dirac states predicted by our HSE/TB calculations of the band structure. (C) Variation of the charge-transfer gap, ΔCT, with the Ni content, x. The point at x=0 is the metastable state adiabatically connected with the metallic phase found for x>xcr0.22. By reducing x from one to zero, the Dirac point, kDirac, moves toward Γ. Correspondingly, the difference between the energy of this point and the Fermi level increases. (D) kDirac variation for x=0 and x=1, when we relax the screened-exchange fraction parameter α in the modified HSE functional. The black (red) star is located at the value of α that optimally captures the correlation strength in BaNiS2 (BaCoS2), used to predict the evolution in B and C. (E) Density of states (DOS) of the x=0 collinear SDW solution, as computed by GGA+U (black line) with ab initio values for the local Hubbard repulsion and the modified HSE with values for α covering different correlation strengths. Optimal α=19% best matches the GGA+U DOS.

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