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Published Erratum
. 2021 Aug 13;11(1):16884.
doi: 10.1038/s41598-021-95271-5.

Publisher Correction: Optical quantum technologies with hexagonal boron nitride single photon sources

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Published Erratum

Publisher Correction: Optical quantum technologies with hexagonal boron nitride single photon sources

Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik et al. Sci Rep. .
No abstract available

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Figures

Figure 3
Figure 3
Schematic representation of hBN stacking74, electronic band structure of monolayer and Bulk hBN75 and electrical/optical/crystal properties of hBN material. (a,b) Top view and side view of AA’ stacking. (c,d) Top view and side view of AB stacking. (e,f) Electronic band structure of monolayer and bulk hBN with direct and indirect bandgaps respectively. (g) General properties of hBN material and similar Raman shifts (around values) can be observed for high quality crystals.
Figure 4
Figure 4
Schematic of HBT interferometer, important features of an ideal single photon source and experimentally observed quantum emitter characteristics, pictographic representation of atomic behaviour of defects within the host bandgap (a) Schematic representation of HBT interferometer working mechanism and resultant second order autocorrelation curve representing characteristics of a single photon emitter. (b) Important features of an ideal single photon source. (c) Experimentally observed some of the quantum emitter characteristics hosts in hBN, in which characteristic stability upto 800 K and single photon purity 0.01 makes a highest record among all the 2D materials (to date). (d) The energy band diagram of an hBN host with ~ 6 eV bandgap. A luminescent point defect in hBN (with energy range ~ 2.2–3 eV) exhibits an artificial atom kind of behaviour with ground and excited states.

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