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. 2021 Aug 5;14(16):4385.
doi: 10.3390/ma14164385.

MAPbI3 Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization

Ehsan Raza  1   2 , Fakhra Aziz  3 , Arti Mishra  2 , Noora Jabor Al-Thani  4 , Zubair Ahmad  2   4
Affiliations

MAPbI3 Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization

Ehsan Raza et al. Materials (Basel). .

Abstract

The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current-voltage (I-V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.

Keywords: MAPbI3; microrod; photo-resistor.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
(a) Step by step preparation of MAPbI3 rods. (b) Device Structure of Ag/MAPbI3/Ag-based photo-induced resistor, Reproduced with permission from [12] by Raza et al., Copyright 2020, Springer Nature.
Figure 2
Figure 2
Field emission scanning electron microscope (FESEM) images of the MAPbI3 exhibiting porous structure at different magnification levels. (a) 300 µm, (b) 50 µm, (c) 30 µm, and (d) 10 µm.
Figure 3
Figure 3
Energy-dispersive X-ray spectroscopy (EDS) spectra of MAPbI3-based microrods showing peaks of lead (Pb) and iodine (I) as prominent components.
Figure 4
Figure 4
X-ray diffraction (XRD) spectra are showing the crystalline nature of MAPbI3-based microrods.
Figure 5
Figure 5
XPS analysis (a) survey spectra of MAPbI3 crystals, (b) core level spectra of carbon (C 1s), (c) core level spectra of iodide (I 3d), (d) core level spectra of lead (Pb 4f).
Figure 6
Figure 6
I–V characteristics of fabricated Ag/MAPbI3/Ag-based photo-resistor; (a) an initial I–V curve of the device that exhibits a non-linear characteristic, the curves are scanned from 0 to +V and 0 to −V as marked over the curves; (b) typical semilog I–V characteristics, the values of average rectified current (Io), ideality factor (n) are mentioned in the inset; (c) I–V characteristics in the dark and under light (one sun illumination); and (d) Junction resistance (Rj) versus voltage (V) showing series and shunt resistances as Rs and Rsh, respectively. Arrows indicate the scanning directions. I–V hysteresis curves of Ag/MAPbI3/Ag-based photo-resistor (e) under dark and (f) under light conditions. Arrows indicate the scanning directions (−V to 0).
Figure 7
Figure 7
Log V–Log I plots for Ag/MAPbI3/Ag-based photo-resistor (a) under dark and (b) under illumination (100 mW/cm2).
Figure 8
Figure 8
Distribution of carriers in MAPbI3-based microrods under strong carrier injection in space-charge-limited conduction. (a) Thoroughly trapped behavior, (b) partially filled traps (trapped behavior), (c) Strong injection, complete traps filled up (traps filled up (traps free behavior)) Reproduced with permission from [28] by F. C. Chiu.
Figure 9
Figure 9
Photo-sensitivity vs time response of Ag/MAPbI3/Ag-based photo-resistor demonstrating (a) high and low currents and (b) high and low resistances.
See this image and copyright information in PMC

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References

    1. Li J., Li H., Ding D., Li Z., Chen F., Wang Y., Liu S., Yao H., Liu L., Shi Y. High-performance photoresistors based on perovskite thin film with a high PbI2 DOPING LEVEL. Nanomaterials. 2019;9:505. doi: 10.3390/nano9040505. - DOI - PMC - PubMed
    1. Targhi F.F., Jalili Y.S., Kanjouri F. MAPbI3 and FAPbI3 perovskites as solar cells: Case study on structural, electrical and optical properties. Results Phys. 2018;10:616–627. doi: 10.1016/j.rinp.2018.07.007. - DOI
    1. Zhang Y., Liu J., Wang Z., Xue Y., Ou Q., Polavarapu L., Zheng J., Qi X., Bao Q. Synthesis, properties, and optical applications of low-dimensional perovskites. Chem. Commun. 2016;52:13637–13655. doi: 10.1039/C6CC06425F. - DOI - PubMed
    1. Zhang H., Liu M., Yang W., Judin L., Hukka T.I., Priimagi A., Deng Z., Vivo P. Thionation Enhances the Performance of Polymeric Dopant-Free Hole-Transporting Materials for Perovskite Solar Cells. Adv. Mater. Interfaces. 2019;6:1901036. doi: 10.1002/admi.201901036. - DOI
    1. Liu M., Zhang H., Gedamu D., Fourmont P., Rekola H., Hiltunen A., Cloutier S.G., Nechache R., Priimagi A., Vivo P. Halide Perovskite Nanocrystals for Next-Generation Optoelectronics. Small. 2019;15:1900801. doi: 10.1002/smll.201900801. - DOI - PubMed

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