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. 2021 Aug 25;14(17):4805.
doi: 10.3390/ma14174805.

Sintering Temperature, Frequency, and Temperature Dependent Dielectric Properties of Na0.5Sm0.5Cu3Ti4O12 Ceramics

Affiliations

Sintering Temperature, Frequency, and Temperature Dependent Dielectric Properties of Na0.5Sm0.5Cu3Ti4O12 Ceramics

Hicham Mahfoz Kotb et al. Materials (Basel). .

Abstract

NSCTO (Na0.5Sm0.5Cu3Ti4O12) ceramics have been prepared by reactive sintering solid-state reaction where the powder was prepared from the elemental oxides by mechanochemical milling followed by conventional sintering in the temperature range 1000-1100 °C. The influence of sintering temperature on the structural and dielectric properties was thoroughly studied. X-ray diffraction analysis (XRD) revealed the formation of the cubic NSCTO phase. By using the Williamson-Hall approach, the crystallite size and lattice strain were calculated. Scanning electron microscope (SEM) observations revealed that the grain size of NSCTO ceramics is slightly dependent on the sintering temperature where the average grain size increased from 1.91 ± 0.36 μm to 2.58 ± 0.89 μm with increasing sintering temperature from 1000 °C to 1100 °C. The ceramic sample sintered at 1025 °C showed the best compromise between colossal relative permittivity (ε' = 1.34 × 103) and low dielectric loss (tanδ = 0.043) values at 1.1 kHz and 300 K. The calculated activation energy for relaxation and conduction of NSCTO highlighted the important role of single and double ionized oxygen vacancies in these processes.

Keywords: dielectric properties; impedance spectroscopy; sintering.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Room temperature XRD patterns of NSCTO ceramic samples.
Figure 2
Figure 2
FE-SEM micrographs of (a) powder, (b) CS-1000, (c) CS-1025, (d) CS-1075, and (e) CS-1100 samples.
Figure 2
Figure 2
FE-SEM micrographs of (a) powder, (b) CS-1000, (c) CS-1025, (d) CS-1075, and (e) CS-1100 samples.
Figure 3
Figure 3
Temperature dependency of relative permittivity (ε′) at 10 kHz for the NSCTO ceramics.
Figure 4
Figure 4
Thermal coefficient of permittivity as a function of temperature for the NSCTO ceramics.
Figure 5
Figure 5
Frequency dependence of (a) ε′, (b) tanδ at 300 K for NSCTO ceramics, and (c) the frequency dependence of ε′ and tanδ at selected temperatures for CS-1025.
Figure 6
Figure 6
(a) The variation of the fitting parameter α with temperature, and (b) the Arrhenius plot for relaxation time for the NSCTO ceramic samples.
Figure 7
Figure 7
(a) Room temperature impedance complex plane plots for the NSCTO and (b) zoom-in for the high frequency region.
Figure 8
Figure 8
(a) Frequency dependency of σac at 400 K for NSCTO samples and (b) frequency dependency of σac at selected temperatures for CS-1075 NSCTO sample.
Figure 9
Figure 9
The Arrhenius plots of dc conductivity for CS-1000, CS-1025, CS-1075, and CS-1100 NSCTO samples.
Figure 10
Figure 10
Spectra of Z″ at selected temperatures for (a) CS-1000, (b) CS-1025, (c) CS-1075, and (d) CS-1100. The inset of each figure depicts the Arrhenius plot for the relaxation time.

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