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Editorial
. 2021 Dec 17;12(12):1566.
doi: 10.3390/mi12121566.

Editorial for the Special Issue on Flash Memory Devices

Cristian Zambelli  1 , Rino Micheloni  1
Affiliations
Editorial

Editorial for the Special Issue on Flash Memory Devices

Cristian Zambelli et al. Micromachines (Basel). .

Abstract

Flash memory devices represented a breakthrough in the storage industry since their inception in the mid-1980s, and innovation is still ongoing after more than 35 years [...].

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Conflict of interest statement

The authors declare no conflict of interest.

References

    1. Spinelli A., Malavena G., Lacaita A., Monzio Compagnoni C. Random Telegraph Noise in 3D NAND Flash Memories. Micromachines. 2021;12:703. doi: 10.3390/mi12060703. - DOI - PMC - PubMed
    1. Ramesh S., Ajaykumar A., Ragnarsson L., Breuil L., El Hajjam G., Kaczer B., Belmonte A., Nyns L., Soulié J., Van den bosch G., et al. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. Micromachines. 2021;12:1084. doi: 10.3390/mi12091084. - DOI - PMC - PubMed
    1. Chen F., Chen B., Lin H., Kong Y., Liu X., Zhan X., Chen J. Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories. Micromachines. 2021;12:1152. doi: 10.3390/mi12101152. - DOI - PMC - PubMed
    1. Yi S., Kim J. Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. Micromachines. 2021;12:584. doi: 10.3390/mi12050584. - DOI - PMC - PubMed
    1. Song Y., Park B. Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide. Micromachines. 2021;12:328. doi: 10.3390/mi12030328. - DOI - PMC - PubMed

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