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. 2022 Feb 3;13(1):645.
doi: 10.1038/s41467-022-28236-5.

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Affiliations

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Yan Cheng et al. Nat Commun. .

Abstract

Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0.5Zr0.5)O2 thin film. A reversible transition between the polar Pbc21 and antipolar Pbca phases, where the crystal structures of the 180° domain wall of the Pbc21 phase and the unit cell structure of the Pbca phase were identical, was induced by applying appropriate cycling voltages. The critical field strength that determined whether the film would be woken up or fatigued was ~0.8 MV/cm, above or below which wake-up or fatigue was observed, respectively. Repeated cycling with sufficiently high voltages led to development of the interfacial nonpolar P42/nmc phase, which induced fatigue through the depolarizing field effect. The fatigued film could be rejuvenated by applying a slightly higher voltage, indicating that these transitions were reversible. These mechanisms are radically different from those of conventional ferroelectrics.

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Conflict of interest statement

The authors declare no competing interests.

Figures

Fig. 1
Fig. 1. The observation of oxygen atoms of single orthorhombic (O-) phase grain in pristine TiN/Hf0.5Zr0.5O2 (HZO, 15 nm)/TiN device.
a Scanning transmission electron microscopy (STEM) high-angle annular dark-field (HAADF) image of the TiN/HZO/TiN cross-section. b Annular bright-field (ABF) image extracted from the green square area in a, in which the position of the O atomic columns can be clearly detected with different offset and direction. According to the O atomic columns deviated from the center of the four nearest Hf/Zr columns, it can be divided into OI type (center) and OII type (off-center). Some of the OII-site columns shift along the [001], while others shift to the opposite direction. c The atomic models of the Pbc21 and Pbca phases along [010] direction. The purple, navy blue, and cyan-colored solid balls correspond to the Hf/Zr, OI (center), and OII (off-center) ions, respectively.
Fig. 2
Fig. 2. Electrical measurement results of different TiN/HZO/TiN devices: 15-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.5Zr0.5O2, 10-nm-thick Hf0.4Zr0.6O2, 10-nm-thick Hf0.6Zr0.4O2, and the nanolaminated 10-nm-thick Hf0.5Zr0.5O2 films.
a The 2Pr of 15-nm-thick Hf0.5Zr0.5O2 device measured by ±3 V P–V loop and the corresponding leakage currents measured at 2 V, as a function of switching cycles, which was performed by applying bipolar voltage pulses of ±5 V at f = 500 kHz. b The trend of 2Pr changes of different devices with the switching cycles at a low field of ±1.8 MV/cm. c The corresponding leakage current changes with the cycles. d The rejuvenation process of different devices by applying field pulses of ±3 MV/cm. e Ten cycles of fatigue/rejuvenation process on the 15-nm-thick Hf0.5Zr0.5O2 device under ±2.2 V, 5 × 106 bipolar pulses for fatigue and ±4.0 V, 1 × 104 bipolar pulses for recovery.
Fig. 3
Fig. 3. The observation of OAFEPbca phase returning to OFEPbc21 phase after wake-up process.
a Cross-section STEM-HAADF image of the TiN/HZO/TiN device after wake-up under the bipolar triangle pulses of ±4 V, 104 cycles with f =500 kHz, in which a [010] oriented HZO O-phase grain is examined. b ABF image acquired from the green square area in a, the majority of the off-center OII atomic columns shifted along the [001] direction (green), demonstrating a Pbc21-dominated phase structure after the wake-up. The inset magnified ABF image shows the shifting direction of OII atomic columns deviating from the center of the four nearest Hf/Zr columns, fitting well with Pbc21 structure.
Fig. 4
Fig. 4. Phase transition from OFEPbc21 to OAFEPbca phase after fatigue process.
a Cross-section HAADF image of the TiN/HZO/TiN device after fatigue at Va = ±2.5 V, f = 500 kHz, for 107 times. The image shows an O-phase grain projected along [010] zone axis. b The corresponding ABF image of a, demonstrating clearly the off-center OII atomic columns shifted along the [001] direction (green) and [001¯] direction (purple) alternately, showing a Pbca dominated structure. c The magnified ABF image acquires from the green square area in b, and the arrows show the deviating direction of OII atomic columns from the center of the four nearest Hf/Zr columns.
Fig. 5
Fig. 5. Energy landscape and DFT calculations.
a schematic diagrams of the energy landscape for the Pbca (center global minimum) and Pbc21 (two local minima at finite P) under zero Eeff and non-zero Eeff. b calculated energies of the Pbca, Pbc21(–Ps), and Pbc21(+Ps) as a function of Eeff.

References

    1. Park MH, et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv. Mater. 2015;27:1811–1831. doi: 10.1002/adma.201404531. - DOI - PubMed
    1. Mikolajick T, Slesazeck S, Park MH, Schroeder U. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors. MRS Bull. 2018;43:340–346. doi: 10.1557/mrs.2018.92. - DOI
    1. Park MH, Lee YH, Mikolajick T, Schroeder U, Hwang CS. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Commun. 2018;8:795–808. doi: 10.1557/mrc.2018.175. - DOI
    1. Muller J, Polakowski P, Mueller S, Mikolajick T. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects. ECS J. Solid State Sci. Technol. 2015;4:N30–N35. doi: 10.1149/2.0081505jss. - DOI
    1. Scott JF, Dawber M. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics. Appl. Phys. Lett. 2000;76:3801–3803. doi: 10.1063/1.126786. - DOI