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. 2022 Jan 27;15(3):989.
doi: 10.3390/ma15030989.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Affiliations

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Chiao Chang et al. Materials (Basel). .

Abstract

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Keywords: GeSn; photo-response; photodetector.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
(a) XTEM image of the MBE-grown GeSn sample on n-type Ge wafer. (b) XRD rocking curve scan on the (004) plane. The Sn composition of ~3% is measured. (c) (224) reciprocal space mapping of the GeSn sample. (d) Cross sectional view of the schematic structure of the fabricated GeSn-based PD.
Figure 2
Figure 2
Schematic of the optical measurement setup.
Figure 3
Figure 3
(a) Responsivity vs. incident wavelength measured at incident laser powers of 0.25 and 1.50 mW. (b) Responsivity vs. incident power density at different wavelength from 1500 nm to 1800 nm.
Figure 4
Figure 4
Power-dependent responsivities with incident laser wavelength of (a) 1500 nm, (b) 1650 nm, and (c) 1800 nm.
Figure 5
Figure 5
Time-resolved 1550 nm responsivity measurement with different laser power densities.

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