Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
- PMID: 35160939
- PMCID: PMC8838467
- DOI: 10.3390/ma15030989
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
Abstract
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.
Keywords: GeSn; photo-response; photodetector.
Conflict of interest statement
The authors declare no conflict of interest.
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