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. 2022 Apr 22;8(16):eabn4485.
doi: 10.1126/sciadv.abn4485. Epub 2022 Apr 22.

Superconducting disordered neural networks for neuromorphic processing with fluxons

Affiliations

Superconducting disordered neural networks for neuromorphic processing with fluxons

Uday S Goteti et al. Sci Adv. .

Abstract

In superconductors, magnetic fields are quantized into discrete fluxons (flux quanta Φ0), made of microscopic circulating supercurrents. We introduce a multiterminal synapse network comprising a disordered array of superconducting loops with Josephson junctions. The loops can trap fluxons defining memory, while the junctions allow their movement between loops. Dynamics of fluxons through such a disordered system through a complex reconfigurable energy landscape represents brain-like spiking information flow. In this work, we experimentally demonstrate a three-loop network using YBa2Cu3O7 - δ-based superconducting loops and Josephson junctions, which exhibit stable memory configurations of trapped flux in loops that determine the rate of flow of fluxons through synaptic connections. The memory states are, in turn, affected by the applied input signals but can also be externally configured electrically through control current/feedback terminals. These results establish a previously unexplored, biologically similar architectural approach to neuromorphic computing that is scalable while dissipating energy of atto Joules/spike.

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Figures

Fig. 1.
Fig. 1.. Schematic of four by four superconducting disordered loop neural networks with helium ion beamdefined Josephson junctions.
(A) Synapse network with four input, four output, and four control current/feedback channels to represent all the individual synaptic connections of the recurrent neural network shown in (B). The network comprises 10 superconducting loops connected through various Josephson junctions of different sizes. Incoming and outgoing spike trains are schematically represented for terminals I1 and O1. The input spike trains from all the terminals are converted into current pulses that take various time-dependent paths through Josephson junctions shown as i1, i2, etc. Some current pulses switch Josephson junctions above their critical currents and are stored as circulating currents in adjacent loops (i.e., flux perpendicular to the plane), representing the memory state of the synapse. The switching event and the generation/transfer of flux quanta are schematically shown using the dotted circle, and the flux stored in various loops is represented as n1Φ0, n2Φ0, etc. (B) Schematic of an equivalent recurrent neural network with four input (labeled I1, I2, I3, and I4), four output channels (labeled O1, O2, O3, and O4), and four external control current/feedback channels for external memory configuration. (C) Flux quanta propagation through the synapse network shown in (A). Flux can get trapped in loops and can propagate along different paths through the junctions to various output terminals. Variations in memory states result in differences in populations of flux quanta at each of the outputs.
Fig. 2.
Fig. 2.. Experimental three-loop one by one superconducting disordered neural network.
(A) Optical microscope image of a YBCO-based three-loop network with focused helium ion Josephson junctions used in the experiment to study the synaptic properties between one input-output terminal pair shown as I1 and O1. A control current parameter with current flowing between B1 and the ground can be used to change the memory configurations. Experiments involve excitation of the device with currents I1 and B1. The input and the control current are also varied in time relative to each other. (B) Schematic of a three-loop network showing currents and flux configurations in memory state S1. Outgoing flux corresponds to anticlockwise-circulating currents in loop 2. (C) Three-loop network schematic showing memory state S2 with an outgoing flow rate of zero. Currents and flux configuration correspond to the superconducting state of junction at O1, with the current difference i2i3 below its critical current. (D) Three-loop network schematic showing memory state S4 with increased outgoing flux flow. One of the junctions in loop 3 is in the superconducting state (i.e., i5i6 below its critical current), resulting in additional current diverted to the output. (E) Three-loop network schematic showing memory state S5 with outgoing flux corresponding to clockwise-circulating current in loop 2.
Fig. 3.
Fig. 3.. Electrical characteristicsstatic operation.
Current-voltage characteristics of the three-loop network shown in Fig. 2 corresponding to the experimental results of static operation. (A) Current at input I1 continuously varied between −1 and 1 mA is plotted against the measured input voltage VI1, while a constant control current is applied at B1. Ten different measurements corresponding to currents at B1 with values from 0 to 90 μA with an increment of 10 μA are plotted. (B) Current at input I1 continuously varied between −1 and 1 mA is plotted against the measured output voltage VO1 at different constant control currents B1 ranging from 0 to 90 μA with an increment of 10 μA. (C) Current at B1 continuously varied between −90 and 90 μA is plotted against the measured input voltage VI1 while a constant input current is applied at I1 (constant values ranging between 0 and 200 μA with an increment of 20 μA). (D) Current at B1 continuously varied between −90 and 90 μA is plotted against the measured input voltage VO1 while a constant input current is applied at I1 (constant values ranging between 0 and 200 μA with an increment of 20 μA).
Fig. 4.
Fig. 4.. Evolution of memory states observed as different rates of flow of flux.
Experimental observation of stable memory states in superconducting synapse networks in the form of rate of flow of flux between input-output terminals defined in a state space of voltages (or frequencies of spiking signals into the network) and control currents. (A) Rate of flow of flux quanta (dVO1dVI1) through the three-loop disordered array synapse network (Fig. 2A) measured at 28 K while varying the input voltage VI1 (or corresponding current I1) at different constant current biases B1. The curves are offset in the y axis, with an offset value proportional to control current B1 (i.e., an offset of 0.2 per 1 μA of B1). Stable memory states are observed as constant rates of flow of flux labeled from S1 to S5. Three stable states exist at B1 of 0 μA, with two new states emerging as B1 are increased. (B) Rate of flow of flux quanta (dVO1dVI1) through the three-loop synapse network (Fig. 2A) measured while continuously varying the input voltage VO1 (or corresponding current B1) at different constant current inputs I1. Three different stable memory states are revealed initially, with two additional emergent states as I1 is increased. The curves are offset in the y axis, with an offset value proportional to control current B1 (i.e., an offset 1 per 2 μA of I1). The voltages at which these states occur, and the width of the states can be configured using I1.
Fig. 5.
Fig. 5.. Dynamic transitions between memory states dependent on relative phase difference of input signals.
Dynamic memory states and the corresponding state transitions experimentally observed in the state space of VI1 and VO1 as the phase difference δ is varied from 0 to 2π between sinusoidal current inputs I1 and B1, both 1 Hz of frequency and 1 mA and 100 μA of amplitudes, respectively. The movement of states and the state transitions around the space as δ is varied are labeled T1, T2, and T3.
Fig. 6.
Fig. 6.. Electrical scan of state space of operation of the three-loop one by one superconducting neural network.
Dynamic memory states and the corresponding state transitions experimentally observed in the state space of VI1 and VO1, as the frequency of sinusoidal control current B1 is varied from 1 to 100 Hz with the input current at 1 Hz. The amplitudes of I1 and B1 are 1 mA and 100 μA, respectively. (A) fI1fB1=1. (B) fI1fB1=1/2. (C) fI1fB1=1/3. (D) fI1fB1=1/4. (E) fI1fB1=1/5. (F) fI1fB1=1/10. (G) fI1fB1=1/20. (H) fI1fB1=1/50. (I) fI1fB1=1/100. Different memory states, labeled from S1 to S13, and transitions between them can be observed that overlap with the states observed in Fig. 4 (A and B).

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