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. 2022 Apr 18;13(4):640.
doi: 10.3390/mi13040640.

Comparison of Vibration-Assisted Scratch Characteristics of SiC Polytypes (3C-, 4H- and 6H-SiC)

Wuqing Lin  1   2   3 , Zhongwei Hu  1   2 , Yue Chen  1   2 , Yuqiang Zhang  1   2 , Yiqing Yu  2 , Xipeng Xu  1   2 , Jie Zhang  3
Affiliations

Comparison of Vibration-Assisted Scratch Characteristics of SiC Polytypes (3C-, 4H- and 6H-SiC)

Wuqing Lin et al. Micromachines (Basel). .

Abstract

Single-crystal silicon carbide (SiC) is widely used because of its excellent properties. However, SiC is a typical hard and brittle material, and there are many challenges in realizing its high efficiency and high-precision machining. Grinding is the main method used to achieve the high-efficiency processing of SiC, but the contradiction between processing quality and processing efficiency is prominent. Vibration-assisted grinding is an effective method to realize high-efficiency and precision machining of SiC. To reveal the vibration-assisted grinding mechanism of SiC, the vibration-assisted nano-scratch process is studied using the molecular dynamics method, and the material removal process and damage formation mechanism in the vibration-assisted scratch are analyzed. Aiming at the three main structural crystal types, 3C-, 4H- and 6H-SiC, scratch simulations were carried out. The vibration-assisted scratch characteristics of SiC polytypes were evaluated from the perspectives of scratch force and the amorphous layer. It was found that the effects of vibration-assisted scratch on different crystal structures of SiC differ, and 3C-SiC is quite different from 4H- and 6H-SiC. Through vibration-assisted scratch simulations under different scratch conditions and vibration characteristics, the influence laws for machining parameters and vibration characteristic parameters were explored. It was found that increasing the frequency and amplitude was beneficial for improving the machining effect. This provides a basis for vibration-assisted grinding technology to be used in the high-efficiency precision machining of SiC.

Keywords: SiC polytypes; molecular dynamics method; scratch characteristics; vibration-assisted scratch.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Molecular dynamics model of 3C-, 4H- and 6H-SiC.
Figure 2
Figure 2
Comparison of conventional and vibration-assisted scratch forces of SiC polytypes: (a) the Si-face of 3C-, 4H-and 6H-SiC, respectively, (b) the C-face of 3C-, 4H-and 6H-SiC, respectively, the simulation parameters of conventional scratch are 4 nm (depth) and 100 m/s (scratch speed) and the simulation parameters of vibration-assisted scratch are 4 nm (depth), 100 m/s (scratch speed), 4 nm (amplitude) and 16.67 GHz (frequency).
Figure 3
Figure 3
Variation in scratch force reduction ratio of SiC polytypes with different amplitudes: (a) Si-face and (b) C-face of SiC.
Figure 4
Figure 4
Variation in scratch force reduction ratio of SiC polytypes with different amplitudes: (a) Si-face and (b) C-face of SiC.
Figure 5
Figure 5
Variation in scratch force reduction ratio of SiC polytypes with different depths: (a) Si-face and (b) C-face of SiC.
Figure 6
Figure 6
Variation in scratch force reduction ratio of SiC polytypes with different speeds: (a) Si-face and (b) C-face of SiC.
Figure 7
Figure 7
The amorphous atomic layer at the scratch distance of 15 nm of (a,b) 3C-SiC, (c,d) 4H-SiC and (e,f) 6H-SiC under CS and VS.
Figure 8
Figure 8
Amorphous atoms’ volume increment and amorphous atoms’ layer thickness reduction ratio of SiC polytypes with different amplitudes: (a) Si-face and (b) C-face of SiC.
Figure 9
Figure 9
Amorphous atoms’ volume increment and amorphous atoms’ layer thickness reduction ratio of SiC polytypes with different frequencies: (a) Si-face and (b) C-face of SiC.
Figure 10
Figure 10
Amorphous atoms’ volume increment and amorphous atoms’ layer thickness reduction ratio of SiC polytypes with different depths: (a) Si-face and (b) C-face of SiC.
Figure 11
Figure 11
Amorphous atoms’ volume increment and amorphous atoms’ layer thickness reduction ratio of SiC polytypes with different speeds: (a) Si-face and (b) C-face of SiC.
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