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. 2018 May 3;8(30):16464-16469.
doi: 10.1039/c8ra02915f.

Effect of fluorination of naphthalene diimide-benzothiadiazole copolymers on ambipolar behavior in field-effect transistors

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Effect of fluorination of naphthalene diimide-benzothiadiazole copolymers on ambipolar behavior in field-effect transistors

Cunbin An et al. RSC Adv. .

Abstract

Two naphthalene diimide (NDI)-benzothiadiazole (BT) based conjugated polymers with high molecular weight, P1 and P2, were synthesized by introducing F atoms to modulate the electron-donating ability of the BT moiety. 3-Decyl-pentadecyl branched alkyl side chains were employed and expected to improve the molecular organization and device performance. Both polymers have excellent solubility in common organic solvents. UV-vis-NIR absorption and cyclic voltammetry indicate that the maximum absorption wavelength of P2 is blue-shifted and the HOMO energy level of P2 is decreased in comparison with P1. Two dimensional wide angle X-ray scattering of thin films revealed a similar organization of both polymers. A less balanced transport in field-effect transistors with increased electron mobility of 0.258 cm2 V-1 s-1 and lowered hole transport of 2.4 × 10-3 cm2 V-1 s-1 was found for P2. Polymer devices of P1 exhibited a balanced ambipolar transport, with a hole mobility of 0.073 cm2 V-1 s-1 and electron mobility of 0.086 cm2 V-1 s-1.

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Conflict of interest statement

There are no conflicts to declare.

Figures

Scheme 1
Scheme 1. Synthetic route for polymers P1 and P2.
Fig. 1
Fig. 1. UV-vis absorption spectra of P1 and P2 in chloroform solution (c = 10−6 M) and thin film.
Fig. 2
Fig. 2. The reduction and oxidation curves of P1 and P2. The films were deposited from chloroform solutions.
Fig. 3
Fig. 3. Energy level diagram of three monomers and the monomeric subunits of P1 and P2, the energy level values are obtained from DFT calculations (B3LYP, 6–31 g(d)).
Fig. 4
Fig. 4. Tapping mode height AFM images of (a) P1 and (b) P2 thin films after annealing at 200 °C. Grazing-incidence wide-angle X-ray scattering (GIWAXS) patterns of (c) P1 and (d) P2 thin films after annealing at 200 °C.
Fig. 5
Fig. 5. (a) and (b) Transfer, (c) and (d) output characteristics of P1 and P2 thin films after annealing at 200 °C.

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