Quantum Diffusion in the Lowest Landau Level of Disordered Graphene
- PMID: 35630897
- PMCID: PMC9145546
- DOI: 10.3390/nano12101675
Quantum Diffusion in the Lowest Landau Level of Disordered Graphene
Abstract
Electronic transport in the lowest Landau level of disordered graphene sheets placed in a homogeneous perpendicular magnetic field is a long-standing and cumbersome problem which defies a conclusive solution for several years. Because the modeled system lacks an intrinsic small parameter, the theoretical picture is infested with singularities and anomalies. We propose an analytical approach to the conductivity based on the analysis of the diffusive processes, and we calculate the density of states, the diffusion coefficient and the static conductivity. The obtained results are not only interesting from the purely theoretical point of view but have a practical significance as well, especially for the development of the novel high-precision calibration devices.
Keywords: electronic transport in graphene; low-dimensional semimetals; quantum hall effect.
Conflict of interest statement
The authors declare no conflict of interest.
Figures
References
-
- Abrahams E., Anderson P.W., Licciardello D.C., Ramakrishnan T.V. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions. Phys. Rev. Lett. 1979;42:673–676. doi: 10.1103/PhysRevLett.42.673. - DOI
-
- Gor’kov L.G., Larkin A.I., Khmel’nitskii D.E. Particle conductivity in a two-dimensional random potential. JETP Lett. 1979;30:228–232.
-
- Hikami S., Larkin A., Nagaoka Y. Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System. Prog. Theor. Phys. 1980;63:707–710. doi: 10.1143/PTP.63.707. - DOI
-
- Vollhardt D., Wölfle P. Diagrammatic, self-consistent treatment of the Anderson localization problem in d⩽2 dimensions. Phys. Rev. B. 1980;22:4666–4679. doi: 10.1103/PhysRevB.22.4666. - DOI
-
- Hanein Y., Meirav U., Shahar D., Li C.C., Tsui D.C., Shtrikman H. The metallic like conductivity of a two-dimensional hole system. Phys. Rev. Lett. 1998;80:1288–1291. doi: 10.1103/PhysRevLett.80.1288. - DOI
LinkOut - more resources
Full Text Sources
