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. 2022 Jun 9;12(12):1977.
doi: 10.3390/nano12121977.

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Tangyou Sun  1 , Hui Shi  1 , Shuai Gao  1 , Zhiping Zhou  2 , Zhiqiang Yu  3 , Wenjing Guo  1 , Haiou Li  1 , Fabi Zhang  1 , Zhimou Xu  4 , Xiaowen Zhang  1
Affiliations

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Tangyou Sun et al. Nanomaterials (Basel). .

Abstract

Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS2 is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS2/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS2/ITO was improved greatly. Furthermore, a large resistive memory window up to 104 was observed in the Ag/ZnO/PVA:MoS2/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS2/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

Keywords: ZnO/PVA:MoS2; data retention; endurance; memory window; resistive switching.

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Conflict of interest statement

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Figures

Figure 1
Figure 1
Structure and basic characteristics of the device. (a) Schematic illustration of the Ag/ZnO/PVA:MoS2/ITO memory, (b) SEM image of the ZnO surface, (c) PVA:MoS2 deposited on the ITO glass substrate, (d) XPS spectra of Zn2p in the ZnO layer, (e) XPS spectra of O1s in the ZnO layer, (f) Raman spectra of MoS2, (g) XRD patterns of PVA:MoS2 composite.
Figure 2
Figure 2
The I–V curve and switching behaviors of (a) Ag/PVA:MoS2/ITO, PVA:MoS2 = 4:1, insect: Ag/PVA/ITO, (b) Ag/PVA:MoS2/ITO, PVA:MoS2 = 4:3. (c) The endurance of PVA:MoS2 = 4:1 RRAM, (d) The resistive-state retention time of HRS and LRS of Ag/PVA:MoS2/ITO, PVA:MoS2 = 4:1.
Figure 3
Figure 3
(a) The I–V characteristics of the Ag/ZnO/PVA:MoS2/ITO, PVA:MoS2 = 4:1, insert: electrical circuit for the device. (b) Cumulative probability of SET/RESET voltages for Ag/PVA:MoS2/ITO and Ag/ZnO/PVA:MoS2/ITO, PVA:MoS2 = 4:1. (c) DC sweep mode endurance cycles at read voltage 0.2 V, respectively. (d) Retention property in both LRS and HRS at read voltage 0.2 V.
Figure 4
Figure 4
(a) I–V curve of the Ag/ZnO/PVA:MoS2/ITO memristor plotted in log-log scale, (b) Energy band diagram of Ag/ZnO/PVA:MoS2/ITO device structure, (c) Schematic presentation of resistive switching mechanism in Pristine (i), LRS (ii) and HRS (iii), respectively.
See this image and copyright information in PMC

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