Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
. 2022 Jul 8;12(1):11685.
doi: 10.1038/s41598-022-15631-7.

Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications

Affiliations

Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications

Pengyu Lai et al. Sci Rep. .

Abstract

This paper reports high-temperature optocouplers for signal galvanic isolation. Low temperature co-fired ceramic (LTCC) technology was used in the design and fabrication of the high-temperature optocoupler package. The optimal coupling behaviors, driving capabilities and response speed of the optocouplers were concentrated and investigated in this paper. Emitters and detectors with different emission and spectral wavelengths were studied to achieve optimal coupling behaviors. Relatively high coupling efficiency is achieved with emitters and detectors of emission and spectral wavelength in the red spectrum (i.e., 620-750 nm), leading to higher current transfer ratios (CTR). To further enhance the electrical performance, optocouplers with multiple detectors in parallel were designed and fabricated. CTR, leakage current and response speed (i.e., propagation delay, rise time and fall time) of the optocouplers were characterized over a range of temperatures from 25 to 250 °C. The CTR degrades at high temperatures, while the leakage current and response speed show little degradation with varying temperatures. Furthermore, the behaviors of the optocouplers with varying temperatures are modeled and analyzed.

PubMed Disclaimer

Conflict of interest statement

The authors declare no competing interests.

Figures

Figure 1
Figure 1
(a) Cross-sectional view and (b) 3D model view of the LTCC-based high-temperature optocoupler.
Figure 2
Figure 2
LTCC-based high-temperature optocoupler (a) fabrication flow and (b) fabricated sample.
Figure 3
Figure 3
(a) Schematic and (b) experimental setup for DC characteristics.
Figure 4
Figure 4
Output current versus input current of optocuplers with various types of emitters and detectors.
Figure 5
Figure 5
EL emissions and spectral responses for various types of emitters and detectors.
Figure 6
Figure 6
Optocoupler output current versus input current at 25 °C with different quantity of detectors.
Figure 7
Figure 7
CTR of optocouplers with varying temperatures.
Figure 8
Figure 8
Leakage current of optocouplers with varying temperatures.
Figure 9
Figure 9
Optocoupler test circuit for transient characteristics.
Figure 10
Figure 10
Transient measurement results of optocouplers with varying temperatures: (a) propagation delay, (b) rise time, and (c) fall time.
Figure 11
Figure 11
Normalized CTR of (a) RD-RD, and (b) RD-OPC.

References

    1. Kaminski, N. State of the art and the future of wide band-gap devices. In 13th European Conference on Power Electronics and Applications (2009).
    1. Kononchuk O, Nguyen B-Y. Silicon-on-Insulator (SOI) Technology: manufacture and Applications. Elsevier; 2014.
    1. Whitaker B, Barkley A, Cole Z, Passmore B, Martin D, McNutt TR, Lostetter AB, Lee JS, Shiozaki K. A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices. IEEE Trans. Power Electron. 2014 doi: 10.1109/TPEL.2013.2279950. - DOI
    1. Weng MH, Clark DT, Wright SN, Gordon DL, Duncan MA, Kirkham SJ, Idris MI, Chan HK, Young RAR, Ramsay EP, Wright NG, Horsfall AB. Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide, semicond. Sci. Technol. 2017;32(5):054003.
    1. Barlow, M. et al. An integrated SiC CMOS gate driver. In Proc. Conf. IEEE Appl. Power Electron. Conf. Expo. (APEC) 1646–1649. 10.1109/APEC.2016.7468087 (2016).

Publication types