Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective
- PMID: 36432052
- PMCID: PMC9698540
- DOI: 10.3390/molecules27227952
Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective
Abstract
Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost-effective yet high-performance sensors, two key considerations toward the translation of such devices in real-life applications. Metal-oxide semiconductor FET biochemical sensors are especially well-suited to the development of Point-of-Care testing (PoCT) devices, as illustrated by the rapidly growing body of reports in the field. Yet, metal-oxide semiconductor FET sensors remain confined to date, mainly in academia. Toward accelerating the real-life translation of this exciting technology, we review the current literature and discuss the critical features underpinning the successful development of metal-oxide semiconductor FET-based PoCT devices that meet the stringent performance, manufacturing, and regulatory requirements of PoCT.
Keywords: field effect transistor sensor; metal-oxide; point-of-care testing; regulatory pathway; semiconductor materials.
Conflict of interest statement
The authors declare no conflict of interest.
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