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. 2023 Jan 1;13(1):193.
doi: 10.3390/nano13010193.

Enhancing the Performance of the Photonic Integrated Sensing System by Applying Frequency Interrogation

Grigory S Voronkov  1 , Yana V Aleksakina  1 , Vladislav V Ivanov  1 , Aida G Zakoyan  1 , Ivan V Stepanov  1 , Elizaveta P Grakhova  1 , Muhammad A Butt  2 , Ruslan V Kutluyarov  1
Affiliations

Enhancing the Performance of the Photonic Integrated Sensing System by Applying Frequency Interrogation

Grigory S Voronkov et al. Nanomaterials (Basel). .

Abstract

Lab-on-a-chip systems are currently one of the most promising areas in the development of ultra-compact sensor systems, used primarily for gas and liquid analysis to determine the concentration of impurities. Integrated photonics is an ideal basis for designing "lab-on-a-chip" systems, advantageous for its compactness, energy efficiency, and low cost in mass production. This paper presents a solution for "lab-on-a-chip" device realization, consisting of a sensor and an interrogator based on a silicon-on-insulator (SOI) integrated photonics platform. The sensor function is performed by an all-pass microring resonator (MRR), installed as a notch filter in the feedback circuit of an optoelectronic oscillator based on an electro-optic phase modulator. This structure realizes the frequency interrogation of the sensor with high accuracy and speed using a conventional single-mode laser source. The system sensitivity for the considered gases is 13,000 GHz/RIU. The results show that the use of frequency interrogation makes it possible to increase the intrinsic LoD by five orders. The proposed solution opens an opportunity for fully integrated implementation of a photonic "laboratory-on-a-chip" unit.

Keywords: gas sensing; integrated photonics; interrogation; optoelectronic oscillator; refractometry; silicon photonics.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
Sensing system structure and layout (not to scale).
Figure 2
Figure 2
OEO spectrum and generating principle.
Figure 3
Figure 3
E-field distribution of the CCl4 sensor at (a) a non-resonant wavelength (1532.39 nm) and (b) a resonant wavelength (1543.2 nm).
Figure 4
Figure 4
Relationship between ambient refractive index and resonant wavelength for the add-drop sensor.
Figure 5
Figure 5
Transmission spectra of the add-drop MRR sensor for different ambient gases.
Figure 6
Figure 6
E-field distribution of the CCl4 sensor at (a) a non-resonant wavelength (1545.03 nm) and (b) a resonant wavelength (1545.73 nm).
Figure 7
Figure 7
Transmission spectrum of the MRR for different ambient gases.
Figure 8
Figure 8
E-field distribution of the CCl4 sensor at (a) a non-resonant wavelength (1532.39 nm) and (b) a resonant wavelength (1543.2 nm).
Figure 9
Figure 9
OEO start process for SOI-based MRR interrogation.
Figure 10
Figure 10
Transmission spectra at the thru-port for CO detection using an SOI-based MRR.
Figure 11
Figure 11
OEO output frequency dependence on gas RI using an SOI-based MRR.
See this image and copyright information in PMC

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