Amorphous Mixed-Vanadium-Tungsten Oxide Films as Optically Passive Ion Storage Materials for Solid-State Near-Infrared Electrochromic Devices

Abstract

Near infrared (NIR) electrochromic (EC) devices that selectively modulate the NIR light without affecting the daylight represent a promising window technology for saving energy consumption of buildings. Current research efforts have been focused on developing NIR-EC materials, while little attention has been directed to the optically passive ion storage materials that are crucial for balancing charges in a full NIR-EC device. Herein, we report that amorphous phase mixed-vanadium-tungsten oxide films exhibit minimum optical change with high ion storage capacity, which enables the usage of the mixed-metal oxides as optically passive counter electrode materials for NIR-EC devices. The mixed-vanadium-tungsten oxide films are synthesized by a room-temperature solution-based photodeposition method that allows us to precisely engineer the metal compositions and thicknesses of the mixed-metal oxide films, thus optimizing their optical inertness and ion storage capability. A solid-state NIR-EC device assembled with the mixed-vanadium-tungsten oxide film as an ion storage layer and the amorphous tungsten oxide hydrate as the NIR-EC layer shows fast response speed with cycling stability up to 10,000 cycles, proving the outstanding charge balancing capability of mixed-metal oxide. Our work provides an efficient strategy for developing optically passive ion storage films with high ion storage capability for high-performance EC devices.

Keywords: amorphous phase; charge balance; mixed-vanadium-tungsten oxide film; near infrared electrochromic device; optically passive ion storage layer.