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Review
. 2009 Jul 13;21(25-26):2632-2663.
doi: 10.1002/adma.200900375.

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser  1   2   3 , Regina Dittmann  1   2 , Georgi Staikov  1   2 , Kristof Szot  1   2
Affiliations
Review

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser et al. Adv Mater. .

Abstract

This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..

Keywords: data storage; defects; electrochemical metallization cells; memory devices; memristors; resistive switching oxides; valence change.

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References

    1. Nanotechnology, Vol. 3 (Ed: R. Waser), Wiley-VCH, Weinheim 2008.
    1. A. Flocke, T. G. Noll, C. Kugeler, C. Nauenheim, R. Waser, in Proc. IEEE Non-Volatile Memory Technology Symposium, 2008, p. 319.
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