Single-crystalline van der Waals layered dielectric with high dielectric constant

Abstract

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel^1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration^1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface^3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi₂SeO₅. The centimetre-scale single crystal of Bi₂SeO₅ can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm² and as thin as monolayer. With these Bi₂SeO₅ nanosheets as dielectric and encapsulation layers, 2D materials such as Bi₂O₂Se, MoS₂ and graphene show improved electronic performances. For example, in 2D Bi₂O₂Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm² V^-1 s^-1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.