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. 2023 Mar 15;8(12):10930-10940.
doi: 10.1021/acsomega.2c07408. eCollection 2023 Mar 28.

Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Rakesh K Prasad  1 , Dilip K Singh  1
Affiliations

Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Rakesh K Prasad et al. ACS Omega. .

Abstract

The growth of large crystallite continuous monolayer materials like molybdenum disulfide (MoS2) with the desired morphology via chemical vapor deposition (CVD) remains a challenge. In CVD, the complex interplay of various factors like growth temperatures, precursors, and nature of the substrate decides the crystallinity, crystallite size, and coverage area of the grown MoS2 monolayer. In the present work, we report about the role of weight fraction of molybdenum trioxide (MoO3), sulfur, and carrier gas flow rate toward nucleation and monolayer growth. The concentration of MoO3 weight fraction has been found to govern the self-seeding process and decides the density of nucleation sites affecting the morphology and coverage area. A carrier gas flow of 100 sccm argon results in large crystallite continuous films with a lower coverage area (70%), while a flow rate of 150 sccm results in 92% coverage area with a reduced crystallite size. Through a systematic variation of experimental parameters, we have established the recipe for the growth of large crystallite atomically thin MoS2 suitable for optoelectronic devices.

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Conflict of interest statement

The authors declare no competing financial interest.

Figures

Figure 1
Figure 1
(a) Schematic setup for thermal CVD-based synthesis of MoS2 monolayers and (b) temperature variation for MoO3 and sulfur during the MoS2 growth process. (c) Variation of gas flow rate during growth.
Figure 2
Figure 2
(a) Optical microscopy image of grown MoS2 flakes, (b) field-emission electron microscopy (FESEM) images of MoS2 grown on 285 nm—SiO2/Si, (c) Raman spectra of MoS2, and (d) photoluminescence spectra from grown MoS2 films.
Figure 3
Figure 3
(a) AFM image of grown sample of MoS2 (b) thickness profile of monolayer MoS2.
Figure 4
Figure 4
Optical micrographs of CVD-grown MoS2 flakes with varying amounts of MoO3 precursors (a) 10, (b) 15, (c) 20 (d) 25, (e) 30 mg, and (f) variation of domain size and coverage area with increasing weight of MoO3.
Figure 5
Figure 5
(a) Raman spectra of grown MoS2 with varying MoO3 weight fraction, (b) variation in the Raman shift position of A1g and E2g1, and (c) photoluminescence spectra of MoS2 grown by varying MoO3 weight fraction.
Figure 6
Figure 6
Optical microscopy images for the CVD-grown MoS2 flakes with varying amounts of sulfur (a) 100, (b) 200, (c) 300, (d) 400, (e) 500 mg, and (f) dependence of domain size and coverage area on the weight fraction of the sulfur.
Figure 7
Figure 7
(a) Raman spectra of grown MoS2 with varying sulfur weight fraction and (b) variation in the Raman shift position of A1g and E2g1.
Figure 8
Figure 8
Optical image for CVD grown MoS2 flakes with varying gas flow rates (a) 50, (b) 150, (c) 200, (d) 250, (e) 300 sccm, and (f) dependence of coverage area and crystallite size on the carrier gas flow rate.
Figure 9
Figure 9
(a) Raman spectra of grown MoS2 with varying MoO3 weight fraction and (b) variation in the Raman shift position of A1g and E2g1.
Figure 10
Figure 10
Effect of molecular ratio (MoO3/sulfur) on the (a) crystallite size and (b) coverage area %.
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