Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation
Review
. 2023 May;18(5):422-441.
doi: 10.1038/s41565-023-01361-y. Epub 2023 Apr 27.

Wurtzite and fluorite ferroelectric materials for electronic memory

Kwan-Ho Kim  1 , Ilya Karpov  2 , Roy H Olsson 3rd  1 , Deep Jariwala  3
Affiliations
Review

Wurtzite and fluorite ferroelectric materials for electronic memory

Kwan-Ho Kim et al. Nat Nanotechnol. 2023 May.

Abstract

Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided.

PubMed Disclaimer

References

    1. Ielmini, D. & Wong, H. S. P. In-memory computing with resistive switching devices. Nat. Electron. 1, 333–343 (2018). - DOI
    1. Salahuddin, S., Ni, K. & Datta, S. The era of hyper-scaling in electronics. Nat. Electron. 1, 442–450 (2018). - DOI
    1. Mack, C. A. Fifty years of Moore’s law. IEEE Trans. Semicond. Manuf. 24, 202–207 (2011). - DOI
    1. Fazio, A. Advanced Technology and Systems of Cross Point Memory. In 2020 IEEE International Electron Devices Meeting 24.1.1–24.1.4 (IEEE 2020).
    1. Jung, S. et al. A crossbar array of magnetoresistive memory devices for in-memory computing. Nature 601, 211–216 (2022). - DOI

LinkOut - more resources