Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature
- PMID: 37170881
- DOI: 10.1002/cphc.202300182
Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature
Abstract
We demonstrate that the strong N2 bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N2 with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N2 that significantly weaken the N2 bond. This activated N2 triple bond dissociation on the surface leads to the formation of a Si3 N interface.
Keywords: STM; XPS; nitrogen activation; scanning tunneling microscopy; silicon.
© 2023 Wiley-VCH GmbH.
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