Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song^{1

2}, Ji-Hoon Kang^{1

2}, Xinyuan Zhang^{2

3}, Wonjae Ji⁴, Alon Ascoli⁵, Ioannis Messaris⁵, Ahmet Samil Demirkol⁵, Bowei Dong⁶, Samarth Aggarwal⁶, Weier Wan⁷, Seok-Man Hong⁸, Suma George Cardwell⁹, Irem Boybat¹⁰, Jae-Sun Seo¹¹, Jang-Sik Lee⁴, Mario Lanza¹², Hanwool Yeon¹³, Murat Onen¹⁴, Ju Li^{3

15}, Bilge Yildiz^{3

15}, Jesús A Del Alamo¹⁴, Seyoung Kim⁴, Shinhyun Choi⁸, Gianluca Milano¹⁶, Carlo Ricciardi¹⁷, Lambert Alff¹⁸, Yang Chai¹⁹, Zhongrui Wang²⁰, Harish Bhaskaran⁶, Mark C Hersam^{21

22

23}, Dmitri Strukov²⁴, H-S Philip Wong⁷, Ilia Valov^{25

26}, Bin Gao²⁷, Huaqiang Wu²⁷, Ronald Tetzlaff⁵, Abu Sebastian¹⁰, Wei Lu²⁸, Leon Chua²⁹, J Joshua Yang³⁰, Jeehwan Kim^{1

2

3}

Affiliations

¹ Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
² Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
³ Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
⁴ Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
⁵ Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
⁶ Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
⁷ Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
⁸ The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
⁹ Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
¹⁰ IBM Research Europe, 8803 Rüschlikon, Switzerland.
¹¹ School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, United States.
¹² Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
¹³ School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
¹⁴ Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
¹⁵ Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
¹⁶ Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce, Torino 10135, Italy.
¹⁷ Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi, Torino 10129, Italy.
¹⁸ Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany.
¹⁹ Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong 999077, China.
²⁰ Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
²¹ Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
²² Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
²³ Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.
²⁴ Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States.
²⁵ Research Centre Juelich, PGI-7, Wilhelm-Johnen-Str., Juelich 52425, Germany.
²⁶ Institute of Electrochemistry and Energy Systems "Acad. E. Budewski", Bulgarain Academy of Sciences, "Acad. G. Bochev 10" str., 1113 Sofia, Bulgaria.
²⁷ School of Integrated Circuits, Tsinghua University, Beijing 100084, China.
²⁸ Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, United States.
²⁹ Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States.
³⁰ Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States.

PMID: 37382380
DOI: 10.1021/acsnano.3c03505

Review

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song et al. ACS Nano. 2023.

. 2023 Jul 11;17(13):11994-12039.

doi: 10.1021/acsnano.3c03505. Epub 2023 Jun 29.

Authors

Affiliations

¹ Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
² Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
³ Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
⁴ Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
⁵ Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
⁶ Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
⁷ Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
⁸ The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
⁹ Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
¹⁰ IBM Research Europe, 8803 Rüschlikon, Switzerland.
¹¹ School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, United States.
¹² Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
¹³ School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
¹⁴ Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
¹⁵ Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
¹⁶ Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce, Torino 10135, Italy.
¹⁷ Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi, Torino 10129, Italy.
¹⁸ Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany.
¹⁹ Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong 999077, China.
²⁰ Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
²¹ Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
²² Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
²³ Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.
²⁴ Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States.
²⁵ Research Centre Juelich, PGI-7, Wilhelm-Johnen-Str., Juelich 52425, Germany.
²⁶ Institute of Electrochemistry and Energy Systems "Acad. E. Budewski", Bulgarain Academy of Sciences, "Acad. G. Bochev 10" str., 1113 Sofia, Bulgaria.
²⁷ School of Integrated Circuits, Tsinghua University, Beijing 100084, China.
²⁸ Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, United States.
²⁹ Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States.
³⁰ Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States.

PMID: 37382380
DOI: 10.1021/acsnano.3c03505

Abstract

Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.

Keywords: compute-in-memory; ferroelectric memory; in-sensor computing; ion-intercalation resistors; memristor; memtransistors; neuromorphic computing; phase change memory; resistive switching memory.

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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Affiliations

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Authors

Affiliations

Abstract

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Full Text Sources