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. 2023 Jul 17;13(1):11495.
doi: 10.1038/s41598-023-38651-3.

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

Iman Chahardah Cherik  1 , Saeed Mohammadi  2
Affiliations

Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction

Iman Chahardah Cherik et al. Sci Rep. .

Abstract

This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n+ drain region. By employing the wet-etching technique, two cavities are carved in the gate dielectric, and with the entry of various biomolecules into the cavities, the electrostatic integrity of the gate changes, accordingly. Numerical simulations, carried out by the Silvaco ATLAS device simulator, show that including trap-assisted tunneling significantly modulate the biosensor's main parameters, such as on-state current, subthreshold swing, and transconductance and their corresponding sensitivities. We also evaluate the effect of semi-filled cavities on our proposed biosensor's performance with various configurations. The FOMs like Ion/Ioff = 2.04 × 106, [Formula: see text]=1.48 × 105, and [Formula: see text]=0.61 in the presence of TAT show that our proposed biosensor has a promising performance.

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Conflict of interest statement

The authors declare no competing interests.

Figures

Figure 1
Figure 1
A schematic cross-sectional view of the proposed DMDS-TFET biosensor structure.
Figure 2
Figure 2
Fabrication process steps for realizing DMDS-TFET structure.
Figure 3
Figure 3
Reproduction of the transfer characteristics of (a) a double-gate TFET and (b) a doping-less TFET by our calibrated simulation framework.
Figure 4
Figure 4
Impact of different biomolecules filling the cavities on the energy bands diagram.
Figure 5
Figure 5
Transfer characteristics of DMDS-TFET (a) without TAT (b) with TAT.
Figure 6
Figure 6
Drain current sensitivity of DMDS-TFET (a) without TAT (b) with TAT.
Figure 7
Figure 7
Impact of TAT on (a) subthreshold swing and (b) subthreshold swing sensitivity.
Figure 8
Figure 8
The selectivity between [APTES-Biotin] and [Biotin-Uricase] (a) without TAT (b) with TAT.
Figure 9
Figure 9
Impact of charge biomolecule of DNA on the energy bands diagram.
Figure 10
Figure 10
Transfer characteristics of DMDS-TFET biosensor (a) without TAT and (b) with TAT for charged DNA biomolecule.
Figure 11
Figure 11
Drain current sensitivity of DMDS-TFET biosensor (a) without TAT and (b) with TAT for charged DNA biomolecule.
Figure 12
Figure 12
Impact of TAT on (a) subthreshold swing and (b) subthreshold swing sensitivity of the biosensor at the presence of charged DNA biomolecule.
Figure 13
Figure 13
Impact of TAT on (a) transconductance and (b) transconductance sensitivity for various biomolecules.
Figure 14
Figure 14
Impact of temperature on the transfer characteristics of DMDS-TFET biosensor (a) without TAT and (b) with TAT.
Figure 15
Figure 15
Various types of semi-filled cavities.
Figure 16
Figure 16
Impact of various cases of semi-filled cavities on (a) transfer characteristics and (b) drain current sensitivity of DMDS-TFET biosensor.
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